E-band stacked InP DHBT power amplifier with broadband impedance transforming combiner

T. K. Johansen, M. Squartecchia, V. Midili, J. Y. Dupuy, V. Nodjiadjim, M. Riet, A. Konczykowska

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

This paper reports on an E-band stacked power amplifier implemented in a power optimized InP DHBT microwave monolithic integrated circuit (MMIC) technology. A broadband impedance transforming four-way combiner is proposed to allow simultaneous operation over the E-band frequency ranges of 71-76 GHz and 81-86 GHz. The power amplifier exhibits a maximum saturated output power of 22 dBm at 74 GHz with a linear power gain of 16.6 dB. The output power remains larger than 20 dBm from 71-76 GHz and larger than 19 dBm from 81-86 GHz.

Original languageEnglish
Title of host publicationProceedings of European Microwave Conference in Central Europe
EditorsJan Vrba, Milan Svanda, Ondrej Fiser, David Vrba
PublisherIEEE
Publication date1 May 2019
Pages6-9
Article number8874752
ISBN (Electronic)9782874870675
Publication statusPublished - 1 May 2019
Event2019 European Microwave Conference in Central Europe, EuMCE 2019 - Prague, Czech Republic
Duration: 13 May 201915 May 2019

Conference

Conference2019 European Microwave Conference in Central Europe, EuMCE 2019
CountryCzech Republic
CityPrague
Period13/05/201915/05/2019

Keywords

  • Double heterojunction bipolar transistor (DHBT)
  • Indium phosphide
  • Power amplifiers
  • Stacking

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