Abstract
This paper reports on an E-band stacked power amplifier implemented in a power optimized InP DHBT microwave monolithic integrated circuit (MMIC) technology. A broadband impedance transforming four-way combiner is proposed to allow simultaneous operation over the E-band frequency ranges of 71-76 GHz and 81-86 GHz. The power amplifier exhibits a maximum saturated output power of 22 dBm at 74 GHz with a linear power gain of 16.6 dB. The output power remains larger than 20 dBm from 71-76 GHz and larger than 19 dBm from 81-86 GHz.
| Original language | English |
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| Title of host publication | Proceedings of European Microwave Conference in Central Europe |
| Editors | Jan Vrba, Milan Svanda, Ondrej Fiser, David Vrba |
| Publisher | IEEE |
| Publication date | 1 May 2019 |
| Pages | 6-9 |
| Article number | 8874752 |
| ISBN (Electronic) | 9782874870675 |
| Publication status | Published - 1 May 2019 |
| Event | 2019 European Microwave Conference in Central Europe - Prague, Czech Republic Duration: 13 May 2019 → 15 May 2019 https://ieeexplore.ieee.org/xpl/conhome/8858427/proceeding |
Conference
| Conference | 2019 European Microwave Conference in Central Europe |
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| Country/Territory | Czech Republic |
| City | Prague |
| Period | 13/05/2019 → 15/05/2019 |
| Internet address |
Keywords
- Double heterojunction bipolar transistor (DHBT)
- Indium phosphide
- Power amplifiers
- Stacking