E-band Indium Phosphide double heterojunction bipolar transistor monolithic microwave-integrated circuit power amplifier based on stacked transistors

Michele Squartecchia, Tom K. Johansen*, Jean Yves Dupuy, Virginie Nodjiadjim, Virginio Midili, Muriel Riet, Agnieszka Konczykowska

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

A monolithic microwave-integrated circuit 2-stage power amplifier (PA) realized in indium phosphide double heterojunction bipolar transistor technology is presented in this article. The 2- and 3-stacked transistors are used in the driver and power stages, respectively. As a mean to increase the output power capabilities, 2- and 4-way corporate power combiners are implemented in coplanar waveguide technology. The fabricated PA exhibits a small-signal gain of 13.6 dB at 77 GHz and a 3-dB bandwidth ranging from 74 to 86 GHz. At 78 GHz, the saturated output power is >19.6 dBm.

Original languageEnglish
JournalMicrowave and Optical Technology Letters
Volume61
Issue number2
Pages (from-to)550-555
ISSN0895-2477
DOIs
Publication statusPublished - 1 Jan 2018

Keywords

  • Double heterojunction bipolar transistor
  • Indium phosphide
  • P½ower amplifier
  • Power combining
  • Stacked transistor

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