E-band Indium Phosphide double heterojunction bipolar transistor monolithic microwave-integrated circuit power amplifier based on stacked transistors

Michele Squartecchia; Tom K. Johansen; Jean Yves Dupuy; Virginie Nodjiadjim; Virginio Midili; Muriel Riet; Agnieszka Konczykowska

doi:10.1002/mop.31558

E-band Indium Phosphide double heterojunction bipolar transistor monolithic microwave-integrated circuit power amplifier based on stacked transistors

Michele Squartecchia, Tom K. Johansen^*, Jean Yves Dupuy, Virginie Nodjiadjim, Virginio Midili, Muriel Riet, Agnieszka Konczykowska

^*Corresponding author for this work

Université Paris-Saclay

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

A monolithic microwave-integrated circuit 2-stage power amplifier (PA) realized in indium phosphide double heterojunction bipolar transistor technology is presented in this article. The 2- and 3-stacked transistors are used in the driver and power stages, respectively. As a mean to increase the output power capabilities, 2- and 4-way corporate power combiners are implemented in coplanar waveguide technology. The fabricated PA exhibits a small-signal gain of 13.6 dB at 77 GHz and a 3-dB bandwidth ranging from 74 to 86 GHz. At 78 GHz, the saturated output power is >19.6 dBm.

Original language	English
Journal	Microwave and Optical Technology Letters
Volume	61
Issue number	2
Pages (from-to)	550-555
ISSN	0895-2477
DOIs	https://doi.org/10.1002/mop.31558
Publication status	Published - 1 Jan 2018

Keywords

Double heterojunction bipolar transistor
Indium phosphide
P½ower amplifier
Power combining
Stacked transistor

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10.1002/mop.31558

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title = "E-band Indium Phosphide double heterojunction bipolar transistor monolithic microwave-integrated circuit power amplifier based on stacked transistors",

abstract = "A monolithic microwave-integrated circuit 2-stage power amplifier (PA) realized in indium phosphide double heterojunction bipolar transistor technology is presented in this article. The 2- and 3-stacked transistors are used in the driver and power stages, respectively. As a mean to increase the output power capabilities, 2- and 4-way corporate power combiners are implemented in coplanar waveguide technology. The fabricated PA exhibits a small-signal gain of 13.6 dB at 77 GHz and a 3-dB bandwidth ranging from 74 to 86 GHz. At 78 GHz, the saturated output power is >19.6 dBm.",

keywords = "Double heterojunction bipolar transistor, Indium phosphide, P½ower amplifier, Power combining, Stacked transistor",

author = "Michele Squartecchia and Johansen, {Tom K.} and Dupuy, {Jean Yves} and Virginie Nodjiadjim and Virginio Midili and Muriel Riet and Agnieszka Konczykowska",

year = "2018",

month = jan,

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doi = "10.1002/mop.31558",

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journal = "Microwave and Optical Technology Letters",

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E-band Indium Phosphide double heterojunction bipolar transistor monolithic microwave-integrated circuit power amplifier based on stacked transistors. / Squartecchia, Michele; Johansen, Tom K.; Dupuy, Jean Yves et al.
In: Microwave and Optical Technology Letters, Vol. 61, No. 2, 01.01.2018, p. 550-555.

Research output: Contribution to journal › Journal article › Research › peer-review

TY - JOUR

T1 - E-band Indium Phosphide double heterojunction bipolar transistor monolithic microwave-integrated circuit power amplifier based on stacked transistors

AU - Squartecchia, Michele

AU - Johansen, Tom K.

AU - Dupuy, Jean Yves

AU - Nodjiadjim, Virginie

AU - Midili, Virginio

AU - Riet, Muriel

AU - Konczykowska, Agnieszka

PY - 2018/1/1

Y1 - 2018/1/1

N2 - A monolithic microwave-integrated circuit 2-stage power amplifier (PA) realized in indium phosphide double heterojunction bipolar transistor technology is presented in this article. The 2- and 3-stacked transistors are used in the driver and power stages, respectively. As a mean to increase the output power capabilities, 2- and 4-way corporate power combiners are implemented in coplanar waveguide technology. The fabricated PA exhibits a small-signal gain of 13.6 dB at 77 GHz and a 3-dB bandwidth ranging from 74 to 86 GHz. At 78 GHz, the saturated output power is >19.6 dBm.

AB - A monolithic microwave-integrated circuit 2-stage power amplifier (PA) realized in indium phosphide double heterojunction bipolar transistor technology is presented in this article. The 2- and 3-stacked transistors are used in the driver and power stages, respectively. As a mean to increase the output power capabilities, 2- and 4-way corporate power combiners are implemented in coplanar waveguide technology. The fabricated PA exhibits a small-signal gain of 13.6 dB at 77 GHz and a 3-dB bandwidth ranging from 74 to 86 GHz. At 78 GHz, the saturated output power is >19.6 dBm.

KW - Double heterojunction bipolar transistor

KW - Indium phosphide

KW - P½ower amplifier

KW - Power combining

KW - Stacked transistor

U2 - 10.1002/mop.31558

DO - 10.1002/mop.31558

M3 - Journal article

AN - SCOPUS:85058055801

SN - 0895-2477

VL - 61

SP - 550

EP - 555

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 2

ER -

E-band Indium Phosphide double heterojunction bipolar transistor monolithic microwave-integrated circuit power amplifier based on stacked transistors

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Keywords

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