Dynamic Characterization and Impulse Response Modeling of Amplitude and Phase Response of Silicon Nanowires

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Amplitude and phase dynamics of silicon nanowires were measured using time-resolved spectroscopy. Time shifts of the maximum phase change and minimum amplitude as a function of pump power due to saturation of the free-carrier density were observed. A phenomenological impulse response model used to fit the experimental data indicated that the free-carrier lifetime was between $7.5 \leq \tau_{\rm fc} \leq 16.2\ \hbox{ns}$, and the two-photon absorption coefficient and the Kerr coefficient were $3 \times 10^{-12}\ \hbox{m.W}^{-1}$ and $4 \times 10^{-18}\ \hbox{m}^{2}.\hbox{W}^{-1}$, respectively, for silicon nanowires with lengths varying from 3.6 to 14.9 mm.
Original languageEnglish
JournalI E E E Photonics Journal
Issue number2
Pages (from-to)4500111
Number of pages11
Publication statusPublished - 2013
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • Silicon nanowire, Pump–probe spectroscopy, Two-photon absorption (TPA), Free-carrier absorption (FCA)

ID: 53118578