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Abstract
Amplitude and phase dynamics of silicon nanowires were measured using time-resolved spectroscopy. Time shifts of the maximum phase change and minimum amplitude as a function of pump power due to saturation of the free-carrier density were observed. A phenomenological impulse response model used to fit the experimental data indicated that the free-carrier lifetime was between $7.5 \leq \tau_{\rm fc} \leq 16.2\ \hbox{ns}$, and the two-photon absorption coefficient and the Kerr coefficient were $3 \times 10^{-12}\ \hbox{m.W}^{-1}$ and $4 \times 10^{-18}\ \hbox{m}^{2}.\hbox{W}^{-1}$, respectively, for silicon nanowires with lengths varying from 3.6 to 14.9 mm.
Original language | English |
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Journal | I E E E Photonics Journal |
Volume | 5 |
Issue number | 2 |
Pages (from-to) | 4500111 |
Number of pages | 11 |
ISSN | 1943-0655 |
DOIs | |
Publication status | Published - 2013 |
Keywords
- Silicon nanowire
- Pump–probe spectroscopy
- Two-photon absorption (TPA)
- Free-carrier absorption (FCA)
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Dive into the research topics of 'Dynamic Characterization and Impulse Response Modeling of Amplitude and Phase Response of Silicon Nanowires'. Together they form a unique fingerprint.Projects
- 1 Finished
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SiMOF: CMOS-Compatible Silicon-Based Micro-Ring Resonator for On-Chip Optical Frequency Comb Generation (SiMOF)
Pu, M. (Project Manager), Yvind, K. (Project Participant) & Peucheret, C. (Project Participant)
01/01/2012 → 30/09/2015
Project: Research