Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power

Keyphrases

• Reactive Ion Etching 100%
• Dry Etching 100%
• Plasma Power 100%
• Surface Damage 100%
• Black Silicon 100%
• Damage Effect 100%
• Capacitively Coupled Plasma 100%
• Light Trapping 50%
• Surface Enhancement 25%
• P-type 25%
• Wafer 25%
• Surface Passivation 25%
• Low Reflectivity 25%
• Aluminum Oxide 25%
• Capacitively Coupled 25%
• Effective Carrier Lifetime 25%
• Ion Energy 25%
• Ion Bombardment 25%
• Coupled Power 25%
• Silicon Solar Cells 25%
• Surface Recombination Velocity 25%
• Atomic Layer Deposition 25%
• Effective Lifetime 25%

Engineering

• Reactive Ion Etch 100%
• Damage Surface 66%
• Passivation 33%
• Reflectance 33%
• Ion Energy 33%
• Surface Recombination Velocity 33%
• Effective Lifetime 33%
• Silicon Solar Cell 33%
• Ion Implantation 33%
• Carrier Lifetime 33%
• Atomic Layer Deposition 33%
• Minority Carriers 33%

Material Science

• Surface Damage 100%
• Silicon 100%
• Al2O3 33%
• Reflectivity 33%
• Ion Implantation 33%
• Reactive Ion Etching 33%
• Silicon Solar Cell 33%
• Surface Passivation 33%
• Carrier Lifetime 33%