Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power

Beniamino Iandolo; Maksym Plakhotnyuk; Maria Gaudig; Rasmus Schmidt Davidsen; Dominik Lausch; Ole Hansen

Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power

Beniamino Iandolo, Maksym Plakhotnyuk, Maria Gaudig, Rasmus Schmidt Davidsen, Dominik Lausch, Ole Hansen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we present a RIE optimization leading to reduced surface damage while retaining excellent light trapping and low reflectivity. In particular, we demonstrate that the reduction of the capacitively coupled power during reactive ion etching preserves a reflectance below 1% and improves the effective minority carrier lifetime thanks to reduced ion energy. Surface passivation using atomic layer deposition of Al₂O₃ improves the effective lifetime to 7.5 ms and 0.8 ms for black silicon n- and p-type wafers, respectively.

Original language	English
Title of host publication	Proceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition
Publication date	2017
Pages	841-843
Publication status	Published - 2017
Event	33rd European PV Solar Energy Conference and Exhibition - RAI Convention & Exhibition Centre, Amsterdam, Netherlands Duration: 25 Sept 2017 → 29 Sept 2017 Conference number: 33 http://www.photovoltaic-conference.com

Conference

Conference	33rd European PV Solar Energy Conference and Exhibition
Number	33
Location	RAI Convention & Exhibition Centre
Country/Territory	Netherlands
City	Amsterdam
Period	25/09/2017 → 29/09/2017
Internet address	http://www.photovoltaic-conference.com

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title = "Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power",

abstract = "Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we present a RIE optimization leading to reduced surface damage while retaining excellent light trapping and low reflectivity. In particular, we demonstrate that the reduction of the capacitively coupled power during reactive ion etching preserves a reflectance below 1% and improves the effective minority carrier lifetime thanks to reduced ion energy. Surface passivation using atomic layer deposition of Al2O3 improves the effective lifetime to 7.5 ms and 0.8 ms for black silicon n- and p-type wafers, respectively.",

author = "Beniamino Iandolo and Maksym Plakhotnyuk and Maria Gaudig and Davidsen, {Rasmus Schmidt} and Dominik Lausch and Ole Hansen",

year = "2017",

language = "English",

pages = "841--843",

booktitle = "Proceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition",

note = "33rd European PV Solar Energy Conference and Exhibition, EU PVSEC 2017 ; Conference date: 25-09-2017 Through 29-09-2017",

url = "http://www.photovoltaic-conference.com",

}

Iandolo, B, Plakhotnyuk, M, Gaudig, M, Davidsen, RS, Lausch, D & Hansen, O 2017, Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power. in Proceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition. pp. 841-843, 33rd European PV Solar Energy Conference and Exhibition, Amsterdam, Netherlands, 25/09/2017.

Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power. / Iandolo, Beniamino; Plakhotnyuk, Maksym; Gaudig, Maria et al.
Proceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition. 2017. p. 841-843.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power

AU - Iandolo, Beniamino

AU - Plakhotnyuk, Maksym

AU - Gaudig, Maria

AU - Davidsen, Rasmus Schmidt

AU - Lausch, Dominik

AU - Hansen, Ole

N1 - Conference code: 33

PY - 2017

Y1 - 2017

N2 - Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we present a RIE optimization leading to reduced surface damage while retaining excellent light trapping and low reflectivity. In particular, we demonstrate that the reduction of the capacitively coupled power during reactive ion etching preserves a reflectance below 1% and improves the effective minority carrier lifetime thanks to reduced ion energy. Surface passivation using atomic layer deposition of Al2O3 improves the effective lifetime to 7.5 ms and 0.8 ms for black silicon n- and p-type wafers, respectively.

AB - Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we present a RIE optimization leading to reduced surface damage while retaining excellent light trapping and low reflectivity. In particular, we demonstrate that the reduction of the capacitively coupled power during reactive ion etching preserves a reflectance below 1% and improves the effective minority carrier lifetime thanks to reduced ion energy. Surface passivation using atomic layer deposition of Al2O3 improves the effective lifetime to 7.5 ms and 0.8 ms for black silicon n- and p-type wafers, respectively.

M3 - Article in proceedings

SP - 841

EP - 843

BT - Proceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition

T2 - 33rd European PV Solar Energy Conference and Exhibition

Y2 - 25 September 2017 through 29 September 2017

ER -

Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power

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