Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power

Beniamino Iandolo, Maksym Plakhotnyuk, Maria Gaudig, Rasmus Schmidt Davidsen, Dominik Lausch, Ole Hansen

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we present a RIE optimization leading to reduced surface damage while retaining excellent light trapping and low reflectivity. In particular, we demonstrate that the reduction of the capacitively coupled power during reactive ion etching preserves a reflectance below 1% and improves the effective minority carrier lifetime thanks to reduced ion energy. Surface passivation using atomic layer deposition of Al2O3 improves the effective lifetime to 7.5 ms and 0.8 ms for black silicon n- and p-type wafers, respectively.
    Original languageEnglish
    Title of host publicationProceedings of the 33rd European Photovoltaic Solar Energy Conference and Exhibition
    Publication date2017
    Pages841-843
    Publication statusPublished - 2017
    Event33rd European PV Solar Energy Conference and Exhibition - RAI Convention & Exhibition Centre, Amsterdam, Netherlands
    Duration: 25 Sep 201729 Sep 2017
    Conference number: 33
    http://www.photovoltaic-conference.com

    Conference

    Conference33rd European PV Solar Energy Conference and Exhibition
    Number33
    LocationRAI Convention & Exhibition Centre
    Country/TerritoryNetherlands
    CityAmsterdam
    Period25/09/201729/09/2017
    Internet address

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