DREM2: a facile fabrication strategy for freestanding three dimensional silicon micro- and nanostructures by a modified Bosch etch process

Bingdong Chang, Flemming Jensen, Jörg Hübner, Henri Jansen*

*Corresponding author for this work

    Research output: Contribution to journalJournal articleResearchpeer-review

    55 Downloads (Pure)

    Abstract

    Three dimensional (3D) silicon micro- and nanostructures enable novel functionalities and better device performances in various fields. Fabrication of real 3D structures in a larger scale and wider applications has been proven to be limited by the technical difficulties during the fabrication process, which normally requires multiple process steps and techniques. Direct top-down fabrication processes by modifying a plasma etch process have been proposed and studied in previous studies. However, the repeatability, size uniformity and the maximal number of stacked layers were limited. Here we report a facile single run fabrication strategy for three dimensional silicon micro- and nanostructures. A good uniformity of suspended layer thickness has to be achieved and up to 10 stacked layers have been fabricated in a single run without other additional steps or post-process procedures. This is enabled by a modified multiplexed Bosch etch process, so called DREM (deposit, remove, etch, multistep), while the DREM etch is used to transfer the patterns into silicon, an extra isotropic etch creates a complete undercut and thus freestanding structures come into form. This method is easy to program and provides well-controlled etch profiles.
    Original languageEnglish
    Article number105012
    JournalJournal of Micromechanics and Microengineering
    Volume28
    Issue number10
    Number of pages10
    ISSN0960-1317
    DOIs
    Publication statusPublished - 2018

    Cite this

    @article{0b71044048dc4649a190305c53dd0df2,
    title = "DREM2: a facile fabrication strategy for freestanding three dimensional silicon micro- and nanostructures by a modified Bosch etch process",
    abstract = "Three dimensional (3D) silicon micro- and nanostructures enable novel functionalities and better device performances in various fields. Fabrication of real 3D structures in a larger scale and wider applications has been proven to be limited by the technical difficulties during the fabrication process, which normally requires multiple process steps and techniques. Direct top-down fabrication processes by modifying a plasma etch process have been proposed and studied in previous studies. However, the repeatability, size uniformity and the maximal number of stacked layers were limited. Here we report a facile single run fabrication strategy for three dimensional silicon micro- and nanostructures. A good uniformity of suspended layer thickness has to be achieved and up to 10 stacked layers have been fabricated in a single run without other additional steps or post-process procedures. This is enabled by a modified multiplexed Bosch etch process, so called DREM (deposit, remove, etch, multistep), while the DREM etch is used to transfer the patterns into silicon, an extra isotropic etch creates a complete undercut and thus freestanding structures come into form. This method is easy to program and provides well-controlled etch profiles.",
    author = "Bingdong Chang and Flemming Jensen and J{\"o}rg H{\"u}bner and Henri Jansen",
    year = "2018",
    doi = "10.1088/1361-6439/aad0c4",
    language = "English",
    volume = "28",
    journal = "Journal of Micromechanics and Microengineering",
    issn = "0960-1317",
    publisher = "IOP Publishing",
    number = "10",

    }

    TY - JOUR

    T1 - DREM2: a facile fabrication strategy for freestanding three dimensional silicon micro- and nanostructures by a modified Bosch etch process

    AU - Chang, Bingdong

    AU - Jensen, Flemming

    AU - Hübner, Jörg

    AU - Jansen, Henri

    PY - 2018

    Y1 - 2018

    N2 - Three dimensional (3D) silicon micro- and nanostructures enable novel functionalities and better device performances in various fields. Fabrication of real 3D structures in a larger scale and wider applications has been proven to be limited by the technical difficulties during the fabrication process, which normally requires multiple process steps and techniques. Direct top-down fabrication processes by modifying a plasma etch process have been proposed and studied in previous studies. However, the repeatability, size uniformity and the maximal number of stacked layers were limited. Here we report a facile single run fabrication strategy for three dimensional silicon micro- and nanostructures. A good uniformity of suspended layer thickness has to be achieved and up to 10 stacked layers have been fabricated in a single run without other additional steps or post-process procedures. This is enabled by a modified multiplexed Bosch etch process, so called DREM (deposit, remove, etch, multistep), while the DREM etch is used to transfer the patterns into silicon, an extra isotropic etch creates a complete undercut and thus freestanding structures come into form. This method is easy to program and provides well-controlled etch profiles.

    AB - Three dimensional (3D) silicon micro- and nanostructures enable novel functionalities and better device performances in various fields. Fabrication of real 3D structures in a larger scale and wider applications has been proven to be limited by the technical difficulties during the fabrication process, which normally requires multiple process steps and techniques. Direct top-down fabrication processes by modifying a plasma etch process have been proposed and studied in previous studies. However, the repeatability, size uniformity and the maximal number of stacked layers were limited. Here we report a facile single run fabrication strategy for three dimensional silicon micro- and nanostructures. A good uniformity of suspended layer thickness has to be achieved and up to 10 stacked layers have been fabricated in a single run without other additional steps or post-process procedures. This is enabled by a modified multiplexed Bosch etch process, so called DREM (deposit, remove, etch, multistep), while the DREM etch is used to transfer the patterns into silicon, an extra isotropic etch creates a complete undercut and thus freestanding structures come into form. This method is easy to program and provides well-controlled etch profiles.

    U2 - 10.1088/1361-6439/aad0c4

    DO - 10.1088/1361-6439/aad0c4

    M3 - Journal article

    VL - 28

    JO - Journal of Micromechanics and Microengineering

    JF - Journal of Micromechanics and Microengineering

    SN - 0960-1317

    IS - 10

    M1 - 105012

    ER -