Double thermal oxidation scheme for the fabrication of SiO2 nanochannels

Karl Fredrik Persson, Lasse Højlund Thamdrup, Morten Bo Lindholm Mikkelsen, S.E. Jaarlgard, Peder Skafte-Pedersen, Henrik Bruus, Anders Kristensen

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    We present a planar fabrication scheme for fluidic systems with silicon dioxide nanochannels and assess the waferscale quality and homogeneity of the fabricated devices. The nanochannels have heights h ranging from 14 to 300 nm and widths w of 2.5, 5 and 10 mu m. Compared to other state-of-the-art fabrication techniques, our double thermal oxidation scheme (DTOS) displays improvements with respect to 4 inch waferscale height variation sigma(h) 2500. We test the devices by measuring capillary filling speed in different channel heights, ranging from 14 to 310 nm. These tests reproduce as well as extend the results reported by Tas et al ( 2004 Appl. Phys. Lett. 85 3274). A systematic deviation from bulk behaviour has been observed for channel heights below 100 nm.
    Original languageEnglish
    JournalNanotechnology
    Volume18
    Issue number24
    Pages (from-to)245301
    ISSN0957-4484
    DOIs
    Publication statusPublished - 2007

    Cite this

    Persson, Karl Fredrik ; Thamdrup, Lasse Højlund ; Mikkelsen, Morten Bo Lindholm ; Jaarlgard, S.E. ; Skafte-Pedersen, Peder ; Bruus, Henrik ; Kristensen, Anders. / Double thermal oxidation scheme for the fabrication of SiO2 nanochannels. In: Nanotechnology. 2007 ; Vol. 18, No. 24. pp. 245301.
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    title = "Double thermal oxidation scheme for the fabrication of SiO2 nanochannels",
    abstract = "We present a planar fabrication scheme for fluidic systems with silicon dioxide nanochannels and assess the waferscale quality and homogeneity of the fabricated devices. The nanochannels have heights h ranging from 14 to 300 nm and widths w of 2.5, 5 and 10 mu m. Compared to other state-of-the-art fabrication techniques, our double thermal oxidation scheme (DTOS) displays improvements with respect to 4 inch waferscale height variation sigma(h) 2500. We test the devices by measuring capillary filling speed in different channel heights, ranging from 14 to 310 nm. These tests reproduce as well as extend the results reported by Tas et al ( 2004 Appl. Phys. Lett. 85 3274). A systematic deviation from bulk behaviour has been observed for channel heights below 100 nm.",
    author = "Persson, {Karl Fredrik} and Thamdrup, {Lasse H{\o}jlund} and Mikkelsen, {Morten Bo Lindholm} and S.E. Jaarlgard and Peder Skafte-Pedersen and Henrik Bruus and Anders Kristensen",
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    Double thermal oxidation scheme for the fabrication of SiO2 nanochannels. / Persson, Karl Fredrik; Thamdrup, Lasse Højlund; Mikkelsen, Morten Bo Lindholm; Jaarlgard, S.E.; Skafte-Pedersen, Peder; Bruus, Henrik; Kristensen, Anders.

    In: Nanotechnology, Vol. 18, No. 24, 2007, p. 245301.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - Double thermal oxidation scheme for the fabrication of SiO2 nanochannels

    AU - Persson, Karl Fredrik

    AU - Thamdrup, Lasse Højlund

    AU - Mikkelsen, Morten Bo Lindholm

    AU - Jaarlgard, S.E.

    AU - Skafte-Pedersen, Peder

    AU - Bruus, Henrik

    AU - Kristensen, Anders

    PY - 2007

    Y1 - 2007

    N2 - We present a planar fabrication scheme for fluidic systems with silicon dioxide nanochannels and assess the waferscale quality and homogeneity of the fabricated devices. The nanochannels have heights h ranging from 14 to 300 nm and widths w of 2.5, 5 and 10 mu m. Compared to other state-of-the-art fabrication techniques, our double thermal oxidation scheme (DTOS) displays improvements with respect to 4 inch waferscale height variation sigma(h) 2500. We test the devices by measuring capillary filling speed in different channel heights, ranging from 14 to 310 nm. These tests reproduce as well as extend the results reported by Tas et al ( 2004 Appl. Phys. Lett. 85 3274). A systematic deviation from bulk behaviour has been observed for channel heights below 100 nm.

    AB - We present a planar fabrication scheme for fluidic systems with silicon dioxide nanochannels and assess the waferscale quality and homogeneity of the fabricated devices. The nanochannels have heights h ranging from 14 to 300 nm and widths w of 2.5, 5 and 10 mu m. Compared to other state-of-the-art fabrication techniques, our double thermal oxidation scheme (DTOS) displays improvements with respect to 4 inch waferscale height variation sigma(h) 2500. We test the devices by measuring capillary filling speed in different channel heights, ranging from 14 to 310 nm. These tests reproduce as well as extend the results reported by Tas et al ( 2004 Appl. Phys. Lett. 85 3274). A systematic deviation from bulk behaviour has been observed for channel heights below 100 nm.

    U2 - 10.1088/0957-4484/18/24/245301

    DO - 10.1088/0957-4484/18/24/245301

    M3 - Journal article

    VL - 18

    SP - 245301

    JO - Nanotechnology

    JF - Nanotechnology

    SN - 0957-4484

    IS - 24

    ER -