Abstract
A new boron-induced deeper acceptor level (퐷∗-center) different from the D-center in nitrogen-boron co-doped 6H fluorescent silicon carbide (f-SiC) is revealed by measuring the temperature-dependent photoluminescence (PL). The 퐷∗-center is correlated to the dominate donor-acceptor-pair (DAP) recombination at low temperature ranges in f-SiC with a PL peak around 1.90 eV. A hole-trap with an energy level that lies between the 퐷∗-center and the D-center is predicted to exist in the f-SiC samples. A two-step thermal ionization involving the hole-trap is proposed to explain the evolution of both 퐷∗-center and D-center related temperature-dependent DAP recombination.
| Original language | English |
|---|---|
| Journal | Optical Materials Express |
| Volume | 9 |
| Issue number | 1 |
| Pages (from-to) | 295-303 |
| ISSN | 2159-3930 |
| DOIs | |
| Publication status | Published - 2019 |
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