Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide

Yi Wei; Abebe Tilahun Tarekegne; Haiyan Ou

doi:10.1364/OME.9.000295

Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide

Yi Wei, Abebe Tilahun Tarekegne, Haiyan Ou^*

^*Corresponding author for this work

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Abstract

A new boron-induced deeper acceptor level (퐷∗-center) different from the D-center in nitrogen-boron co-doped 6H fluorescent silicon carbide (f-SiC) is revealed by measuring the temperature-dependent photoluminescence (PL). The 퐷∗-center is correlated to the dominate donor-acceptor-pair (DAP) recombination at low temperature ranges in f-SiC with a PL peak around 1.90 eV. A hole-trap with an energy level that lies between the 퐷∗-center and the D-center is predicted to exist in the f-SiC samples. A two-step thermal ionization involving the hole-trap is proposed to explain the evolution of both 퐷∗-center and D-center related temperature-dependent DAP recombination.

Original language	English
Journal	Optical Materials Express
Volume	9
Issue number	1
Pages (from-to)	295-303
ISSN	2159-3930
DOIs	https://doi.org/10.1364/OME.9.000295
Publication status	Published - 2019

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title = "Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide",

abstract = "A new boron-induced deeper acceptor level (퐷∗-center) different from the D-center in nitrogen-boron co-doped 6H fluorescent silicon carbide (f-SiC) is revealed by measuring the temperature-dependent photoluminescence (PL). The 퐷∗-center is correlated to the dominate donor-acceptor-pair (DAP) recombination at low temperature ranges in f-SiC with a PL peak around 1.90 eV. A hole-trap with an energy level that lies between the 퐷∗-center and the D-center is predicted to exist in the f-SiC samples. A two-step thermal ionization involving the hole-trap is proposed to explain the evolution of both 퐷∗-center and D-center related temperature-dependent DAP recombination.",

author = "Yi Wei and Tarekegne, {Abebe Tilahun} and Haiyan Ou",

year = "2019",

doi = "10.1364/OME.9.000295",

language = "English",

volume = "9",

pages = "295--303",

journal = "Optical Materials Express",

issn = "2159-3930",

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T1 - Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide

AU - Wei, Yi

AU - Tarekegne, Abebe Tilahun

AU - Ou, Haiyan

PY - 2019

Y1 - 2019

N2 - A new boron-induced deeper acceptor level (퐷∗-center) different from the D-center in nitrogen-boron co-doped 6H fluorescent silicon carbide (f-SiC) is revealed by measuring the temperature-dependent photoluminescence (PL). The 퐷∗-center is correlated to the dominate donor-acceptor-pair (DAP) recombination at low temperature ranges in f-SiC with a PL peak around 1.90 eV. A hole-trap with an energy level that lies between the 퐷∗-center and the D-center is predicted to exist in the f-SiC samples. A two-step thermal ionization involving the hole-trap is proposed to explain the evolution of both 퐷∗-center and D-center related temperature-dependent DAP recombination.

AB - A new boron-induced deeper acceptor level (퐷∗-center) different from the D-center in nitrogen-boron co-doped 6H fluorescent silicon carbide (f-SiC) is revealed by measuring the temperature-dependent photoluminescence (PL). The 퐷∗-center is correlated to the dominate donor-acceptor-pair (DAP) recombination at low temperature ranges in f-SiC with a PL peak around 1.90 eV. A hole-trap with an energy level that lies between the 퐷∗-center and the D-center is predicted to exist in the f-SiC samples. A two-step thermal ionization involving the hole-trap is proposed to explain the evolution of both 퐷∗-center and D-center related temperature-dependent DAP recombination.

U2 - 10.1364/OME.9.000295

DO - 10.1364/OME.9.000295

M3 - Journal article

SN - 2159-3930

VL - 9

SP - 295

EP - 303

JO - Optical Materials Express

JF - Optical Materials Express

IS - 1

ER -

Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide

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