Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide

Yi Wei, Abebe Tilahun Tarekegne, Haiyan Ou*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

311 Downloads (Pure)


A new boron-induced deeper acceptor level (퐷∗-center) different from the D-center in nitrogen-boron co-doped 6H fluorescent silicon carbide (f-SiC) is revealed by measuring the temperature-dependent photoluminescence (PL). The 퐷∗-center is correlated to the dominate donor-acceptor-pair (DAP) recombination at low temperature ranges in f-SiC with a PL peak around 1.90 eV. A hole-trap with an energy level that lies between the 퐷∗-center and the D-center is predicted to exist in the f-SiC samples. A two-step thermal ionization involving the hole-trap is proposed to explain the evolution of both 퐷∗-center and D-center related temperature-dependent DAP recombination.
Original languageEnglish
JournalOptical Materials Express
Issue number1
Pages (from-to)295-303
Publication statusPublished - 2019


Dive into the research topics of 'Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide'. Together they form a unique fingerprint.

Cite this