Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide

Yi Wei, Abebe Tilahun Tarekegne, Haiyan Ou*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

A new boron-induced deeper acceptor level (퐷∗-center) different from the D-center in nitrogen-boron co-doped 6H fluorescent silicon carbide (f-SiC) is revealed by measuring the temperature-dependent photoluminescence (PL). The 퐷∗-center is correlated to the dominate donor-acceptor-pair (DAP) recombination at low temperature ranges in f-SiC with a PL peak around 1.90 eV. A hole-trap with an energy level that lies between the 퐷∗-center and the D-center is predicted to exist in the f-SiC samples. A two-step thermal ionization involving the hole-trap is proposed to explain the evolution of both 퐷∗-center and D-center related temperature-dependent DAP recombination.
Original languageEnglish
JournalOptical Materials Express
Volume9
Issue number1
Pages (from-to)295-303
Number of pages1
ISSN2159-3930
DOIs
Publication statusPublished - 2019

Cite this

@article{82f6a87c9d2e41af8055a6dcb054dc53,
title = "Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide",
abstract = "A new boron-induced deeper acceptor level (퐷∗-center) different from the D-center in nitrogen-boron co-doped 6H fluorescent silicon carbide (f-SiC) is revealed by measuring the temperature-dependent photoluminescence (PL). The 퐷∗-center is correlated to the dominate donor-acceptor-pair (DAP) recombination at low temperature ranges in f-SiC with a PL peak around 1.90 eV. A hole-trap with an energy level that lies between the 퐷∗-center and the D-center is predicted to exist in the f-SiC samples. A two-step thermal ionization involving the hole-trap is proposed to explain the evolution of both 퐷∗-center and D-center related temperature-dependent DAP recombination.",
author = "Yi Wei and Tarekegne, {Abebe Tilahun} and Haiyan Ou",
year = "2019",
doi = "10.1364/OME.9.000295",
language = "English",
volume = "9",
pages = "295--303",
journal = "Optical Materials Express",
issn = "2159-3930",
publisher = "Optical Society of America",
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}

Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide. / Wei, Yi; Tarekegne, Abebe Tilahun; Ou, Haiyan.

In: Optical Materials Express, Vol. 9, No. 1, 2019, p. 295-303.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Double D-centers related donor-acceptor-pairs emission in fluorescent silicon carbide

AU - Wei, Yi

AU - Tarekegne, Abebe Tilahun

AU - Ou, Haiyan

PY - 2019

Y1 - 2019

N2 - A new boron-induced deeper acceptor level (퐷∗-center) different from the D-center in nitrogen-boron co-doped 6H fluorescent silicon carbide (f-SiC) is revealed by measuring the temperature-dependent photoluminescence (PL). The 퐷∗-center is correlated to the dominate donor-acceptor-pair (DAP) recombination at low temperature ranges in f-SiC with a PL peak around 1.90 eV. A hole-trap with an energy level that lies between the 퐷∗-center and the D-center is predicted to exist in the f-SiC samples. A two-step thermal ionization involving the hole-trap is proposed to explain the evolution of both 퐷∗-center and D-center related temperature-dependent DAP recombination.

AB - A new boron-induced deeper acceptor level (퐷∗-center) different from the D-center in nitrogen-boron co-doped 6H fluorescent silicon carbide (f-SiC) is revealed by measuring the temperature-dependent photoluminescence (PL). The 퐷∗-center is correlated to the dominate donor-acceptor-pair (DAP) recombination at low temperature ranges in f-SiC with a PL peak around 1.90 eV. A hole-trap with an energy level that lies between the 퐷∗-center and the D-center is predicted to exist in the f-SiC samples. A two-step thermal ionization involving the hole-trap is proposed to explain the evolution of both 퐷∗-center and D-center related temperature-dependent DAP recombination.

U2 - 10.1364/OME.9.000295

DO - 10.1364/OME.9.000295

M3 - Journal article

VL - 9

SP - 295

EP - 303

JO - Optical Materials Express

JF - Optical Materials Express

SN - 2159-3930

IS - 1

ER -