@inproceedings{7c2b90e4954442768eb7633f1f59bd83,
title = "Doping technologies for InP membranes on silicon for nanolasers",
abstract = " We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2{"} InP to 4{"} SiO 2 /Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10 18 cm -3 for both Zndiffused p-InP and Si-implanted n-InP. ",
keywords = "Doping, III-V on silicon, InP membrane, Si ion implantation, Wafer bonding, Zn diffusion",
author = "Andrey Marchevsky and Jesper M{\o}rk and Kresten Yvind",
year = "2019",
month = jan,
day = "1",
doi = "10.1117/12.2509487",
language = "English",
volume = "10939",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE - International Society for Optical Engineering",
editor = "Belyanin, \{Alexey A.\} and Smowton, \{Peter M.\}",
booktitle = "Proceedings of SPIE",
note = "SPIE Photonics West OPTO 2019 ; Conference date: 02-02-2019 Through 07-02-2019",
}