Doping technologies for InP membranes on silicon for nanolasers

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We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2" InP to 4" SiO 2 /Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10 18 cm -3 for both Zndiffused p-InP and Si-implanted n-InP.

Original languageEnglish
Title of host publicationProceedings of SPIE
EditorsAlexey A. Belyanin, Peter M. Smowton
Number of pages10
Volume10939
PublisherSPIE - International Society for Optical Engineering
Publication date1 Jan 2019
Article number109390U
ISBN (Electronic)9781510625204
DOIs
Publication statusPublished - 1 Jan 2019
EventNovel In-Plane Semiconductor Lasers XVIII 2019 - San Francisco, United States
Duration: 4 Feb 20197 Feb 2019
Conference number: 18

Conference

ConferenceNovel In-Plane Semiconductor Lasers XVIII 2019
Number18
CountryUnited States
CitySan Francisco
Period04/02/201907/02/2019
OtherSPIE OPTO volume 10939
SponsorSPIE
SeriesProceedings of SPIE - The International Society for Optical Engineering
Volume10939
ISSN0277-786X
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • Doping, III-V on silicon, InP membrane, Si ion implantation, Wafer bonding, Zn diffusion

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