Abstract
We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2" InP to 4" SiO 2 /Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10 18 cm -3 for both Zndiffused p-InP and Si-implanted n-InP.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE |
| Editors | Alexey A. Belyanin, Peter M. Smowton |
| Number of pages | 10 |
| Volume | 10939 |
| Publisher | SPIE - International Society for Optical Engineering |
| Publication date | 1 Jan 2019 |
| Article number | 109390U |
| ISBN (Electronic) | 9781510625204 |
| DOIs | |
| Publication status | Published - 1 Jan 2019 |
| Event | Novel In-Plane Semiconductor Lasers XVIII 2019 - San Francisco, United States Duration: 4 Feb 2019 → 7 Feb 2019 Conference number: 18 |
Conference
| Conference | Novel In-Plane Semiconductor Lasers XVIII 2019 |
|---|---|
| Number | 18 |
| Country | United States |
| City | San Francisco |
| Period | 04/02/2019 → 07/02/2019 |
| Other | SPIE OPTO volume 10939 |
| Sponsor | SPIE |
| Series | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 10939 |
| ISSN | 0277-786X |
Keywords
- Doping
- III-V on silicon
- InP membrane
- Si ion implantation
- Wafer bonding
- Zn diffusion
Cite this
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Doping technologies for InP membranes on silicon for nanolasers. / Marchevsky, Andrey; Mørk, Jesper; Yvind, Kresten.
Proceedings of SPIE. ed. / Alexey A. Belyanin; Peter M. Smowton. Vol. 10939 SPIE - International Society for Optical Engineering, 2019. 109390U (Proceedings of SPIE - The International Society for Optical Engineering, Vol. 10939).Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review
TY - GEN
T1 - Doping technologies for InP membranes on silicon for nanolasers
AU - Marchevsky, Andrey
AU - Mørk, Jesper
AU - Yvind, Kresten
PY - 2019/1/1
Y1 - 2019/1/1
N2 - We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2" InP to 4" SiO 2 /Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10 18 cm -3 for both Zndiffused p-InP and Si-implanted n-InP.
AB - We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2" InP to 4" SiO 2 /Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10 18 cm -3 for both Zndiffused p-InP and Si-implanted n-InP.
KW - Doping
KW - III-V on silicon
KW - InP membrane
KW - Si ion implantation
KW - Wafer bonding
KW - Zn diffusion
U2 - 10.1117/12.2509487
DO - 10.1117/12.2509487
M3 - Article in proceedings
AN - SCOPUS:85065675623
VL - 10939
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Proceedings of SPIE
A2 - Belyanin, Alexey A.
A2 - Smowton, Peter M.
PB - SPIE - International Society for Optical Engineering
ER -