Doping technologies for InP membranes on silicon for nanolasers

Andrey Marchevsky*, Jesper Mørk, Kresten Yvind

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

146 Downloads (Pure)

Abstract

We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2" InP to 4" SiO 2 /Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10 18 cm -3 for both Zndiffused p-InP and Si-implanted n-InP.

Original languageEnglish
Title of host publicationProceedings of SPIE
EditorsAlexey A. Belyanin, Peter M. Smowton
Number of pages10
Volume10939
PublisherSPIE - International Society for Optical Engineering
Publication date1 Jan 2019
Article number109390U
ISBN (Electronic)9781510625204
DOIs
Publication statusPublished - 1 Jan 2019
EventNovel In-Plane Semiconductor Lasers XVIII 2019 - San Francisco, United States
Duration: 4 Feb 20197 Feb 2019
Conference number: 18

Conference

ConferenceNovel In-Plane Semiconductor Lasers XVIII 2019
Number18
CountryUnited States
CitySan Francisco
Period04/02/201907/02/2019
OtherSPIE OPTO volume 10939
SponsorSPIE
SeriesProceedings of SPIE - The International Society for Optical Engineering
Volume10939
ISSN0277-786X

Keywords

  • Doping
  • III-V on silicon
  • InP membrane
  • Si ion implantation
  • Wafer bonding
  • Zn diffusion

Cite this

Marchevsky, A., Mørk, J., & Yvind, K. (2019). Doping technologies for InP membranes on silicon for nanolasers. In A. A. Belyanin, & P. M. Smowton (Eds.), Proceedings of SPIE (Vol. 10939). [109390U] SPIE - International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, Vol.. 10939 https://doi.org/10.1117/12.2509487
Marchevsky, Andrey ; Mørk, Jesper ; Yvind, Kresten. / Doping technologies for InP membranes on silicon for nanolasers. Proceedings of SPIE. editor / Alexey A. Belyanin ; Peter M. Smowton. Vol. 10939 SPIE - International Society for Optical Engineering, 2019. (Proceedings of SPIE - The International Society for Optical Engineering, Vol. 10939).
@inproceedings{7c2b90e4954442768eb7633f1f59bd83,
title = "Doping technologies for InP membranes on silicon for nanolasers",
abstract = "We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2{"} InP to 4{"} SiO 2 /Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10 18 cm -3 for both Zndiffused p-InP and Si-implanted n-InP.",
keywords = "Doping, III-V on silicon, InP membrane, Si ion implantation, Wafer bonding, Zn diffusion",
author = "Andrey Marchevsky and Jesper M{\o}rk and Kresten Yvind",
year = "2019",
month = "1",
day = "1",
doi = "10.1117/12.2509487",
language = "English",
volume = "10939",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE - International Society for Optical Engineering",
editor = "Belyanin, {Alexey A.} and Smowton, {Peter M.}",
booktitle = "Proceedings of SPIE",

}

Marchevsky, A, Mørk, J & Yvind, K 2019, Doping technologies for InP membranes on silicon for nanolasers. in AA Belyanin & PM Smowton (eds), Proceedings of SPIE. vol. 10939, 109390U, SPIE - International Society for Optical Engineering, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10939, Novel In-Plane Semiconductor Lasers XVIII 2019, San Francisco, United States, 04/02/2019. https://doi.org/10.1117/12.2509487

Doping technologies for InP membranes on silicon for nanolasers. / Marchevsky, Andrey; Mørk, Jesper; Yvind, Kresten.

Proceedings of SPIE. ed. / Alexey A. Belyanin; Peter M. Smowton. Vol. 10939 SPIE - International Society for Optical Engineering, 2019. 109390U (Proceedings of SPIE - The International Society for Optical Engineering, Vol. 10939).

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

TY - GEN

T1 - Doping technologies for InP membranes on silicon for nanolasers

AU - Marchevsky, Andrey

AU - Mørk, Jesper

AU - Yvind, Kresten

PY - 2019/1/1

Y1 - 2019/1/1

N2 - We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2" InP to 4" SiO 2 /Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10 18 cm -3 for both Zndiffused p-InP and Si-implanted n-InP.

AB - We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2" InP to 4" SiO 2 /Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10 18 cm -3 for both Zndiffused p-InP and Si-implanted n-InP.

KW - Doping

KW - III-V on silicon

KW - InP membrane

KW - Si ion implantation

KW - Wafer bonding

KW - Zn diffusion

U2 - 10.1117/12.2509487

DO - 10.1117/12.2509487

M3 - Article in proceedings

AN - SCOPUS:85065675623

VL - 10939

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Proceedings of SPIE

A2 - Belyanin, Alexey A.

A2 - Smowton, Peter M.

PB - SPIE - International Society for Optical Engineering

ER -

Marchevsky A, Mørk J, Yvind K. Doping technologies for InP membranes on silicon for nanolasers. In Belyanin AA, Smowton PM, editors, Proceedings of SPIE. Vol. 10939. SPIE - International Society for Optical Engineering. 2019. 109390U. (Proceedings of SPIE - The International Society for Optical Engineering, Vol. 10939). https://doi.org/10.1117/12.2509487