Abstract
We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2" InP to 4" SiO 2 /Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10 18 cm -3 for both Zndiffused p-InP and Si-implanted n-InP.
Original language | English |
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Title of host publication | Proceedings of SPIE |
Editors | Alexey A. Belyanin, Peter M. Smowton |
Number of pages | 10 |
Volume | 10939 |
Publisher | SPIE - International Society for Optical Engineering |
Publication date | 1 Jan 2019 |
Article number | 109390U |
ISBN (Electronic) | 9781510625204 |
DOIs | |
Publication status | Published - 1 Jan 2019 |
Event | Novel In-Plane Semiconductor Lasers XVIII 2019 - San Francisco, United States Duration: 4 Feb 2019 → 7 Feb 2019 Conference number: 18 |
Conference
Conference | Novel In-Plane Semiconductor Lasers XVIII 2019 |
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Number | 18 |
Country | United States |
City | San Francisco |
Period | 04/02/2019 → 07/02/2019 |
Other | SPIE OPTO volume 10939 |
Sponsor | SPIE |
Series | Proceedings of SPIE - The International Society for Optical Engineering |
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Volume | 10939 |
ISSN | 0277-786X |
Keywords
- Doping
- III-V on silicon
- InP membrane
- Si ion implantation
- Wafer bonding
- Zn diffusion