Doping technologies for InP membranes on silicon for nanolasers

Andrey Marchevsky; Jesper Mørk; Kresten Yvind

doi:10.1117/12.2509487

Doping technologies for InP membranes on silicon for nanolasers

Andrey Marchevsky^*, Jesper Mørk, Kresten Yvind

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2" InP to 4" SiO ₂ /Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10 ¹⁸ cm ^-3 for both Zndiffused p-InP and Si-implanted n-InP.

Original language	English
Title of host publication	Proceedings of SPIE
Editors	Alexey A. Belyanin, Peter M. Smowton
Number of pages	10
Volume	10939
Publisher	SPIE - International Society for Optical Engineering
Publication date	1 Jan 2019
Article number	109390U
ISBN (Electronic)	9781510625204
DOIs	https://doi.org/10.1117/12.2509487
Publication status	Published - 1 Jan 2019
Event	Novel In-Plane Semiconductor Lasers XVIII 2019 - San Francisco, United States Duration: 4 Feb 2019 → 7 Feb 2019 Conference number: 18

Conference

Conference	Novel In-Plane Semiconductor Lasers XVIII 2019
Number	18
Country	United States
City	San Francisco
Period	04/02/2019 → 07/02/2019
Other	SPIE OPTO volume 10939
Sponsor	SPIE

Series	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10939
ISSN	0277-786X

Keywords

Doping
III-V on silicon
InP membrane
Si ion implantation
Wafer bonding
Zn diffusion

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Marchevsky, A., Mørk, J., & Yvind, K. (2019). Doping technologies for InP membranes on silicon for nanolasers. In A. A. Belyanin, & P. M. Smowton (Eds.), Proceedings of SPIE (Vol. 10939). [109390U] SPIE - International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, Vol.. 10939 https://doi.org/10.1117/12.2509487

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title = "Doping technologies for InP membranes on silicon for nanolasers",

abstract = " We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2{"} InP to 4{"} SiO 2 /Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10 18 cm -3 for both Zndiffused p-InP and Si-implanted n-InP. ",

keywords = "Doping, III-V on silicon, InP membrane, Si ion implantation, Wafer bonding, Zn diffusion",

author = "Andrey Marchevsky and Jesper M{\o}rk and Kresten Yvind",

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Marchevsky, A, Mørk, J & Yvind, K 2019, Doping technologies for InP membranes on silicon for nanolasers. in AA Belyanin & PM Smowton (eds), Proceedings of SPIE. vol. 10939, 109390U, SPIE - International Society for Optical Engineering, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10939, Novel In-Plane Semiconductor Lasers XVIII 2019, San Francisco, United States, 04/02/2019. https://doi.org/10.1117/12.2509487

Doping technologies for InP membranes on silicon for nanolasers. / Marchevsky, Andrey; Mørk, Jesper ; Yvind, Kresten.

Proceedings of SPIE. ed. / Alexey A. Belyanin; Peter M. Smowton. Vol. 10939 SPIE - International Society for Optical Engineering, 2019. 109390U (Proceedings of SPIE - The International Society for Optical Engineering, Vol. 10939).

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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N2 - We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2" InP to 4" SiO 2 /Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10 18 cm -3 for both Zndiffused p-InP and Si-implanted n-InP.

AB - We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2" InP to 4" SiO 2 /Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10 18 cm -3 for both Zndiffused p-InP and Si-implanted n-InP.

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KW - Wafer bonding

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

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