Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance

Adam Jönsson*, Johannes Svensson, Elisabetta Maria Fiordaliso, Erik Lind, Markus Hellenbrand, Lars Erik Wernersson

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

Thin vertical nanowires based on III-V compound semiconductors are viable candidates as channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to attractive carrier transport properties. However, for improved performance in terms of current density as well as contact resistance, adequate characterization techniques for resolving doping distribution within thin vertical nanowires are required. We present a novel method of axially probing the doping profile by systematically changing the gate position, at a constant gate length Lg of 50 nm and a channel diameter of 12 nm, along a vertical nanowire MOSFET and utilizing the variations in threshold voltage VT shift (∼100 mV). The method is further validated using the well-established technique of electron holography to verify the presence of the doping profile. Combined, device and material characterizations allow us to in-depth study the origin of the threshold voltage variability typically present for metal organic chemical vapor deposition (MOCVD)-grown III-V nanowire devices.

Original languageEnglish
JournalAcs Applied Electronic Materials
Volume3
Pages (from-to)5240−5247
ISSN2637-6113
DOIs
Publication statusPublished - 2021

Keywords

  • Doping
  • Electron holography
  • III-V
  • InAs
  • MOSFET
  • Nanowire
  • VLS growth

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