Doping assessment in GaAs nanowires

N. Isik Goktas, Elisabetta Maria Fiordaliso, R. R. LaPierre*

*Corresponding author for this work

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs was studied. The GaAs NWs were grown on (111) Si by molecular beam epitaxy using the self-assisted method. The dopant incorporation in the self-assisted GaAs NWs was investigated using Raman spectroscopy, photoluminescence, secondary ion mass spectrometry and electron holography. Be-doped NWs showed similar carrier concentration as compared to thin film (TF) standards. However, Te-doped NWs showed at least a one order of magnitude lower carrier concentration as compared to TF standards. Dopant incorporation mechanisms in NWs are discussed.
    Original languageEnglish
    Article number234001
    JournalNanotechnology
    Volume29
    Issue number23
    Number of pages12
    ISSN0957-4484
    DOIs
    Publication statusPublished - 2018

    Keywords

    • Nanowire
    • Doping
    • Te
    • Be
    • GaAs

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