Highly doped silicon can be a plasmonic material with negative permittivity for mid-infrared wavelengths. In such case high aspect ratio plasmonic Si trench structures can enhance sensitivity of molecular detection with mid-infrared absorption spectroscopy.
|Number of pages||1|
|Publication status||Published - 2019|
|Event||9th International Conference on Surface Plasmon Photonics - Hotel Scandic Copenhagen, Copenhagen, Denmark|
Duration: 25 May 2019 → 31 May 2019
|Conference||9th International Conference on Surface Plasmon Photonics|
|Location||Hotel Scandic Copenhagen|
|Period||25/05/2019 → 31/05/2019|
El Dib, S. E. H., Shkondin, E., Vertchenko, L., Laurynenka, A., & Takayama, O. (2019). Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing. Abstract from 9th International Conference on Surface Plasmon Photonics, Copenhagen, Denmark.