Doped silicon plasmonic nanotrench structures  for mid-infrared molecular sensing

Sarah Elisabeth Hussein El Dib; Evgeniy Shkondin; Larissa Vertchenko; Andrei Laurynenka; Osamu Takayama

Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing

Sarah Elisabeth Hussein El Dib, Evgeniy Shkondin, Larissa Vertchenko, Andrei Laurynenka, Osamu Takayama^*

^*Corresponding author for this work

Technical University of Denmark

Research output: Contribution to conference › Conference abstract for conference › Research › peer-review

Abstract

Highly doped silicon can be a plasmonic material with negative permittivity for mid-infrared wavelengths. In such case high aspect ratio plasmonic Si trench structures can enhance sensitivity of molecular detection with mid-infrared absorption spectroscopy.

Original language	English
Publication date	2019
Number of pages	1
Publication status	Published - 2019
Event	9th International Conference on Surface Plasmon Photonics - Hotel Scandic Copenhagen, Copenhagen, Denmark Duration: 25 May 2019 → 31 May 2019 Conference number: 9

Conference

Conference	9th International Conference on Surface Plasmon Photonics
Number	9
Location	Hotel Scandic Copenhagen
Country/Territory	Denmark
City	Copenhagen
Period	25/05/2019 → 31/05/2019

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@conference{b590ed90601440e884c18b2092c5c9a6,

title = "Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing",

abstract = "Highly doped silicon can be a plasmonic material with negative permittivity for mid-infrared wavelengths. In such case high aspect ratio plasmonic Si trench structures can enhance sensitivity of molecular detection with mid-infrared absorption spectroscopy. ",

author = "{El Dib}, {Sarah Elisabeth Hussein} and Evgeniy Shkondin and Larissa Vertchenko and Andrei Laurynenka and Osamu Takayama",

year = "2019",

language = "English",

note = "9th International Conference on Surface Plasmon Photonics, SPP9 ; Conference date: 25-05-2019 Through 31-05-2019",

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Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing. / El Dib, Sarah Elisabeth Hussein; Shkondin, Evgeniy; Vertchenko, Larissa et al.
2019. Abstract from 9th International Conference on Surface Plasmon Photonics, Copenhagen, Denmark.

Research output: Contribution to conference › Conference abstract for conference › Research › peer-review

TY - ABST

T1 - Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing

AU - El Dib, Sarah Elisabeth Hussein

AU - Shkondin, Evgeniy

AU - Vertchenko, Larissa

AU - Laurynenka, Andrei

AU - Takayama, Osamu

N1 - Conference code: 9

PY - 2019

Y1 - 2019

N2 - Highly doped silicon can be a plasmonic material with negative permittivity for mid-infrared wavelengths. In such case high aspect ratio plasmonic Si trench structures can enhance sensitivity of molecular detection with mid-infrared absorption spectroscopy.

AB - Highly doped silicon can be a plasmonic material with negative permittivity for mid-infrared wavelengths. In such case high aspect ratio plasmonic Si trench structures can enhance sensitivity of molecular detection with mid-infrared absorption spectroscopy.

M3 - Conference abstract for conference

T2 - 9th International Conference on Surface Plasmon Photonics

Y2 - 25 May 2019 through 31 May 2019

ER -

Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing

Abstract

Conference

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