Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing

Sarah Elisabeth Hussein El Dib, Evgeniy Shkondin, Larissa Vertchenko, Andrei Laurynenka, Osamu Takayama*

*Corresponding author for this work

Research output: Contribution to conferenceConference abstract for conferenceResearchpeer-review

Abstract

Highly doped silicon can be a plasmonic material with negative permittivity for mid-infrared wavelengths. In such case high aspect ratio plasmonic Si trench structures can enhance sensitivity of molecular detection with mid-infrared absorption spectroscopy.
Original languageEnglish
Publication date2019
Number of pages1
Publication statusPublished - 2019
Event9th International Conference on Surface Plasmon Photonics - Hotel Scandic Copenhagen, Copenhagen, Denmark
Duration: 25 May 201931 May 2019
http://www.spp9.dk/

Conference

Conference9th International Conference on Surface Plasmon Photonics
LocationHotel Scandic Copenhagen
CountryDenmark
CityCopenhagen
Period25/05/201931/05/2019
Internet address

Cite this

El Dib, S. E. H., Shkondin, E., Vertchenko, L., Laurynenka, A., & Takayama, O. (2019). Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing. Abstract from 9th International Conference on Surface Plasmon Photonics, Copenhagen, Denmark.