Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing

Sarah Elisabeth Hussein El Dib, Evgeniy Shkondin, Larissa Vertchenko, Andrei Laurynenka, Osamu Takayama*

*Corresponding author for this work

Research output: Contribution to conferenceConference abstract for conferenceResearchpeer-review

Abstract

Highly doped silicon can be a plasmonic material with negative permittivity for mid-infrared wavelengths. In such case high aspect ratio plasmonic Si trench structures can enhance sensitivity of molecular detection with mid-infrared absorption spectroscopy.
Original languageEnglish
Publication date2019
Number of pages1
Publication statusPublished - 2019
Event9th International Conference on Surface Plasmon Photonics - Hotel Scandic Copenhagen, Copenhagen, Denmark
Duration: 25 May 201931 May 2019
http://www.spp9.dk/

Conference

Conference9th International Conference on Surface Plasmon Photonics
LocationHotel Scandic Copenhagen
CountryDenmark
CityCopenhagen
Period25/05/201931/05/2019
Internet address

Cite this

El Dib, S. E. H., Shkondin, E., Vertchenko, L., Laurynenka, A., & Takayama, O. (2019). Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing. Abstract from 9th International Conference on Surface Plasmon Photonics, Copenhagen, Denmark.
El Dib, Sarah Elisabeth Hussein ; Shkondin, Evgeniy ; Vertchenko, Larissa ; Laurynenka, Andrei ; Takayama, Osamu. / Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing. Abstract from 9th International Conference on Surface Plasmon Photonics, Copenhagen, Denmark.1 p.
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title = "Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing",
abstract = "Highly doped silicon can be a plasmonic material with negative permittivity for mid-infrared wavelengths. In such case high aspect ratio plasmonic Si trench structures can enhance sensitivity of molecular detection with mid-infrared absorption spectroscopy.",
author = "{El Dib}, {Sarah Elisabeth Hussein} and Evgeniy Shkondin and Larissa Vertchenko and Andrei Laurynenka and Osamu Takayama",
year = "2019",
language = "English",
note = "9th International Conference on Surface Plasmon Photonics, SPP9 ; Conference date: 25-05-2019 Through 31-05-2019",
url = "http://www.spp9.dk/",

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El Dib, SEH, Shkondin, E, Vertchenko, L, Laurynenka, A & Takayama, O 2019, 'Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing' 9th International Conference on Surface Plasmon Photonics, Copenhagen, Denmark, 25/05/2019 - 31/05/2019, .

Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing. / El Dib, Sarah Elisabeth Hussein; Shkondin, Evgeniy; Vertchenko, Larissa; Laurynenka, Andrei; Takayama, Osamu.

2019. Abstract from 9th International Conference on Surface Plasmon Photonics, Copenhagen, Denmark.

Research output: Contribution to conferenceConference abstract for conferenceResearchpeer-review

TY - ABST

T1 - Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing

AU - El Dib, Sarah Elisabeth Hussein

AU - Shkondin, Evgeniy

AU - Vertchenko, Larissa

AU - Laurynenka, Andrei

AU - Takayama, Osamu

PY - 2019

Y1 - 2019

N2 - Highly doped silicon can be a plasmonic material with negative permittivity for mid-infrared wavelengths. In such case high aspect ratio plasmonic Si trench structures can enhance sensitivity of molecular detection with mid-infrared absorption spectroscopy.

AB - Highly doped silicon can be a plasmonic material with negative permittivity for mid-infrared wavelengths. In such case high aspect ratio plasmonic Si trench structures can enhance sensitivity of molecular detection with mid-infrared absorption spectroscopy.

M3 - Conference abstract for conference

ER -

El Dib SEH, Shkondin E, Vertchenko L, Laurynenka A, Takayama O. Doped silicon plasmonic nanotrench structures for mid-infrared molecular sensing. 2019. Abstract from 9th International Conference on Surface Plasmon Photonics, Copenhagen, Denmark.