Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC

Yiyu Ou; Valdas Jokubavicius; Satoshi Kamiyama; Chuan Liu; Rolf W. Berg; Margareta Linnarsson; Rositza Yakimova; Mikael Syväjärvi; Haiyan Ou

Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC

Yiyu Ou, Valdas Jokubavicius, Satoshi Kamiyama, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Rositza Yakimova, Mikael Syväjärvi, Haiyan Ou

Department of Chemistry

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Abstract

In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown that with N and B concentrations in a range of 1018 cm−3 the samples exhibit the most intense luminescence when the concentration difference (n-type) is about 4.6x1018 cm−3. Raman spectroscopy studies further verified the doping type and concentrations for the samples. Furthermore, strong luminescence intensity in a large emission angle range was achieved from angle-resolved photoluminescence. The results indicate N-B doped fluorescent SiC as a good wavelength converter in white LEDs applications.

Original language	English
Journal	Optical Materials Express
Volume	1
Issue number	8
Pages (from-to)	1439-1446
ISSN	2159-3930
Publication status	Published - 2011

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title = "Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC",

abstract = "In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown that with N and B concentrations in a range of 1018 cm−3 the samples exhibit the most intense luminescence when the concentration difference (n-type) is about 4.6x1018 cm−3. Raman spectroscopy studies further verified the doping type and concentrations for the samples. Furthermore, strong luminescence intensity in a large emission angle range was achieved from angle-resolved photoluminescence. The results indicate N-B doped fluorescent SiC as a good wavelength converter in white LEDs applications.",

author = "Yiyu Ou and Valdas Jokubavicius and Satoshi Kamiyama and Chuan Liu and Berg, {Rolf W.} and Margareta Linnarsson and Rositza Yakimova and Mikael Syv{\"a}j{\"a}rvi and Haiyan Ou",

year = "2011",

language = "English",

volume = "1",

pages = "1439--1446",

journal = "Optical Materials Express",

issn = "2159-3930",

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TY - JOUR

T1 - Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC

AU - Ou, Yiyu

AU - Jokubavicius, Valdas

AU - Kamiyama, Satoshi

AU - Liu, Chuan

AU - Berg, Rolf W.

AU - Linnarsson, Margareta

AU - Yakimova, Rositza

AU - Syväjärvi, Mikael

AU - Ou, Haiyan

PY - 2011

Y1 - 2011

N2 - In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown that with N and B concentrations in a range of 1018 cm−3 the samples exhibit the most intense luminescence when the concentration difference (n-type) is about 4.6x1018 cm−3. Raman spectroscopy studies further verified the doping type and concentrations for the samples. Furthermore, strong luminescence intensity in a large emission angle range was achieved from angle-resolved photoluminescence. The results indicate N-B doped fluorescent SiC as a good wavelength converter in white LEDs applications.

AB - In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown that with N and B concentrations in a range of 1018 cm−3 the samples exhibit the most intense luminescence when the concentration difference (n-type) is about 4.6x1018 cm−3. Raman spectroscopy studies further verified the doping type and concentrations for the samples. Furthermore, strong luminescence intensity in a large emission angle range was achieved from angle-resolved photoluminescence. The results indicate N-B doped fluorescent SiC as a good wavelength converter in white LEDs applications.

M3 - Journal article

SN - 2159-3930

VL - 1

SP - 1439

EP - 1446

JO - Optical Materials Express

JF - Optical Materials Express

IS - 8

ER -

Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC

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