Disentangling surface, bulk, and space-charge-layer conductivity in Si(111)-(7x7)

J.W. Wells, J.F. Kallehauge, Torben Mikael Hansen, P. Hofmann

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    A novel approach for extracting genuine surface conductivities is presented and illustrated using the unresolved example of Si(111)-(7x7). Its temperature-dependent conductivity was measured with a microscopic four point probe between room temperature and 100 K. At room temperature the measured conductance corresponds to that expected from the bulk doping level. However, as the temperatures is lowered below approximate to 200 K, the conductance decreases by several orders of magnitude in a small temperature range and it saturates at a low temperature value of approximate to 4x10(-8) Omega(-1), irrespective of bulk doping. This abrupt transition is interpreted as the switching from bulk to surface conduction, an interpretation which is supported by a numerical model for the measured four point probe conductance. The value of the surface conductance is considerably lower than that of a good metal.
    Original languageEnglish
    JournalPhysical Review Letters
    Issue number20
    Pages (from-to)206803
    Publication statusPublished - 2006

    Bibliographical note

    Copyright 2006 American Physical Society


    • STATES
    • SI(111)7X7
    • GROWTH
    • SI(100)


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