Disclosing the response of the surface electronic structure in SrTiO3 (001) to strain

Eduardo Bonini Guedes; Tobias Willemoes Jensen; Muntaser Naamneh; Alla Chikina; Ramus T. Dahm; Shinhee Yun; Francesco M. Chiabrera; Nicholas C. Plumb; J. Hugo Dil; Ming Shi; Dennis Valbjørn Christensen; Walber Hugo Brito; Nini Pryds; Milan Radović

doi:10.1116/6.0001480

Disclosing the response of the surface electronic structure in SrTiO₃ (001) to strain

Eduardo Bonini Guedes, Tobias Willemoes Jensen, Muntaser Naamneh, Alla Chikina, Ramus T. Dahm, Shinhee Yun, Francesco M. Chiabrera, Nicholas C. Plumb, J. Hugo Dil, Ming Shi, Dennis Valbjørn Christensen, Walber Hugo Brito, Nini Pryds, Milan Radović

Research output: Contribution to journal › Journal article › Research › peer-review

32 Downloads (Pure)

Abstract

Combining angle-resolved photoemission spectroscopy and density functional theory calculations, we addressed the surface electronic structure of bent SrTiO₃ (STO) (001) wafers. Using a custom-made device, we observe that the low-dimensional states that emerge at the STO (001) surface are robust to an external tensile strain of about 0.1%. Our results show that this value of strain is too small to sensibly alter the surface conduction band of STO, but, surprisingly, it is enough to shift the energy of the in-gap states. In order to access higher strain values of around 2%, standard for STO-based heterostructures, we performed density functional theory calculations of STO slabs under different strain configurations. The simulations predict that such levels of both compressive and tensile strain significantly alter the orbital splitting of the surface conduction band. Our study indicates that the strain generated in STO can tailor the electronic properties of its bare surface and of STO-based interfaces.

Original language	English
Article number	013213
Journal	Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films
Volume	40
Issue number	1
Number of pages	8
ISSN	0734-2101
DOIs	https://doi.org/10.1116/6.0001480
Publication status	Published - 2022

Bibliographical note

This paper is a part of the Special Collection Honoring Dr. Scott Chambers' 70th Birthday and His Leadership in the
Science and Technology of Oxide Thin Films.

Access to Document

10.1116/6.0001480

FulltextFinal published version, 3.5 MB

OpenUrl availability

Full text

Cite this

Guedes, E. B., Jensen, T. W., Naamneh, M., Chikina, A., Dahm, R. T., Yun, S., Chiabrera, F. M., Plumb, N. C., Dil, J. H., Shi, M., Valbjørn Christensen, D., Brito, W. H., Pryds, N., & Radović, M. (2022). Disclosing the response of the surface electronic structure in SrTiO₃ (001) to strain. Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, 40(1), [013213]. https://doi.org/10.1116/6.0001480

@article{438306e0e2c24843840c495ee9ef1c81,

title = "Disclosing the response of the surface electronic structure in SrTiO3 (001) to strain",

abstract = "Combining angle-resolved photoemission spectroscopy and density functional theory calculations, we addressed the surface electronic structure of bent SrTiO3 (STO) (001) wafers. Using a custom-made device, we observe that the low-dimensional states that emerge at the STO (001) surface are robust to an external tensile strain of about 0.1%. Our results show that this value of strain is too small to sensibly alter the surface conduction band of STO, but, surprisingly, it is enough to shift the energy of the in-gap states. In order to access higher strain values of around 2%, standard for STO-based heterostructures, we performed density functional theory calculations of STO slabs under different strain configurations. The simulations predict that such levels of both compressive and tensile strain significantly alter the orbital splitting of the surface conduction band. Our study indicates that the strain generated in STO can tailor the electronic properties of its bare surface and of STO-based interfaces.",

author = "Guedes, {Eduardo Bonini} and Jensen, {Tobias Willemoes} and Muntaser Naamneh and Alla Chikina and Dahm, {Ramus T.} and Shinhee Yun and Chiabrera, {Francesco M.} and Plumb, {Nicholas C.} and Dil, {J. Hugo} and Ming Shi and {Valbj{\o}rn Christensen}, Dennis and Brito, {Walber Hugo} and Nini Pryds and Milan Radovi{\'c}",

note = "This paper is a part of the Special Collection Honoring Dr. Scott Chambers' 70th Birthday and His Leadership in the Science and Technology of Oxide Thin Films.",

year = "2022",

doi = "10.1116/6.0001480",

language = "English",

volume = "40",

journal = "Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films",

issn = "0734-2101",

publisher = "American Vacuum Society",

number = "1",

}

Guedes, EB, Jensen, TW, Naamneh, M, Chikina, A, Dahm, RT, Yun, S, Chiabrera, FM, Plumb, NC, Dil, JH, Shi, M, Valbjørn Christensen, D, Brito, WH, Pryds, N & Radović, M 2022, 'Disclosing the response of the surface electronic structure in SrTiO₃ (001) to strain', Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, vol. 40, no. 1, 013213. https://doi.org/10.1116/6.0001480

TY - JOUR

T1 - Disclosing the response of the surface electronic structure in SrTiO3 (001) to strain

AU - Guedes, Eduardo Bonini

AU - Jensen, Tobias Willemoes

AU - Naamneh, Muntaser

AU - Chikina, Alla

AU - Dahm, Ramus T.

AU - Yun, Shinhee

AU - Chiabrera, Francesco M.

AU - Plumb, Nicholas C.

AU - Dil, J. Hugo

AU - Shi, Ming

AU - Valbjørn Christensen, Dennis

AU - Brito, Walber Hugo

AU - Pryds, Nini

AU - Radović, Milan

N1 - This paper is a part of the Special Collection Honoring Dr. Scott Chambers' 70th Birthday and His Leadership in the Science and Technology of Oxide Thin Films.

PY - 2022

Y1 - 2022

N2 - Combining angle-resolved photoemission spectroscopy and density functional theory calculations, we addressed the surface electronic structure of bent SrTiO3 (STO) (001) wafers. Using a custom-made device, we observe that the low-dimensional states that emerge at the STO (001) surface are robust to an external tensile strain of about 0.1%. Our results show that this value of strain is too small to sensibly alter the surface conduction band of STO, but, surprisingly, it is enough to shift the energy of the in-gap states. In order to access higher strain values of around 2%, standard for STO-based heterostructures, we performed density functional theory calculations of STO slabs under different strain configurations. The simulations predict that such levels of both compressive and tensile strain significantly alter the orbital splitting of the surface conduction band. Our study indicates that the strain generated in STO can tailor the electronic properties of its bare surface and of STO-based interfaces.

AB - Combining angle-resolved photoemission spectroscopy and density functional theory calculations, we addressed the surface electronic structure of bent SrTiO3 (STO) (001) wafers. Using a custom-made device, we observe that the low-dimensional states that emerge at the STO (001) surface are robust to an external tensile strain of about 0.1%. Our results show that this value of strain is too small to sensibly alter the surface conduction band of STO, but, surprisingly, it is enough to shift the energy of the in-gap states. In order to access higher strain values of around 2%, standard for STO-based heterostructures, we performed density functional theory calculations of STO slabs under different strain configurations. The simulations predict that such levels of both compressive and tensile strain significantly alter the orbital splitting of the surface conduction band. Our study indicates that the strain generated in STO can tailor the electronic properties of its bare surface and of STO-based interfaces.

U2 - 10.1116/6.0001480

DO - 10.1116/6.0001480

M3 - Journal article

SN - 0734-2101

VL - 40

JO - Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films

JF - Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films

IS - 1

M1 - 013213

ER -