Directional Radiation from GaAs quantum dots in AlGaAs nanowires

R. R. Reznik; K. M. Morozov; I. L. Krestnikov; K. P. Kotlyar; I. P. Soshnikov; L. Leandro; N. Akopian; G. E. Cirlin

doi:10.1134/S106378502104026X

Directional Radiation from GaAs quantum dots in AlGaAs nanowires

R. R. Reznik, K. M. Morozov, I. L. Krestnikov, K. P. Kotlyar, I. P. Soshnikov, L. Leandro, N. Akopian, G. E. Cirlin

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Abstract

We present the results on experimental studies of the directional radiation from GaAs quantum dots in AlGaAs nanowires grown by molecular beam epitaxy technique on silicon surface. It was shown that the radiation intensity from GaAs quantum dots in the direction of nanowires growth is 2 orders of magnitude higher than the intensity of radiation in the perpendicular direction.

Original language	English
Journal	Technical Physics Letters
Volume	47
Issue number	8
Pages (from-to)	47–50
ISSN	1063-7850
DOIs	https://doi.org/10.1134/S106378502104026X
Publication status	Published - 2021

Keywords

Directional radiation
Microphotoluminescence
Molecular beam epitaxy
Nanowires
Wuantum dots
Semiconductors

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10.1134/S106378502104026X

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title = "Directional Radiation from GaAs quantum dots in AlGaAs nanowires",

abstract = "We present the results on experimental studies of the directional radiation from GaAs quantum dots in AlGaAs nanowires grown by molecular beam epitaxy technique on silicon surface. It was shown that the radiation intensity from GaAs quantum dots in the direction of nanowires growth is 2 orders of magnitude higher than the intensity of radiation in the perpendicular direction.",

keywords = "Directional radiation, Microphotoluminescence, Molecular beam epitaxy, Nanowires, Wuantum dots, Semiconductors",

author = "Reznik, {R. R.} and Morozov, {K. M.} and Krestnikov, {I. L.} and Kotlyar, {K. P.} and Soshnikov, {I. P.} and L. Leandro and N. Akopian and Cirlin, {G. E.}",

year = "2021",

doi = "10.1134/S106378502104026X",

language = "English",

volume = "47",

pages = "47–50",

journal = "Technical Physics Letters",

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T1 - Directional Radiation from GaAs quantum dots in AlGaAs nanowires

AU - Reznik, R. R.

AU - Morozov, K. M.

AU - Krestnikov, I. L.

AU - Kotlyar, K. P.

AU - Soshnikov, I. P.

AU - Leandro, L.

AU - Akopian, N.

AU - Cirlin, G. E.

PY - 2021

Y1 - 2021

N2 - We present the results on experimental studies of the directional radiation from GaAs quantum dots in AlGaAs nanowires grown by molecular beam epitaxy technique on silicon surface. It was shown that the radiation intensity from GaAs quantum dots in the direction of nanowires growth is 2 orders of magnitude higher than the intensity of radiation in the perpendicular direction.

AB - We present the results on experimental studies of the directional radiation from GaAs quantum dots in AlGaAs nanowires grown by molecular beam epitaxy technique on silicon surface. It was shown that the radiation intensity from GaAs quantum dots in the direction of nanowires growth is 2 orders of magnitude higher than the intensity of radiation in the perpendicular direction.

KW - Directional radiation

KW - Microphotoluminescence

KW - Molecular beam epitaxy

KW - Nanowires

KW - Wuantum dots

KW - Semiconductors

U2 - 10.1134/S106378502104026X

DO - 10.1134/S106378502104026X

M3 - Journal article

SN - 1063-7850

VL - 47

SP - 47

EP - 50

JO - Technical Physics Letters

JF - Technical Physics Letters

IS - 8

ER -

Directional Radiation from GaAs quantum dots in AlGaAs nanowires

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Keywords

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