Abstract
We report here the graphoepitaxial alignment of a lamellar forming PS-b-PMMA block copolymer (BCP) for directed self-assembly using topographical patterns (simple line structures) of hydrogen silsesquioxane (HSQ). The system demonstrates the importance of the sidewall chemistry on translational alignment of BCP domains. A method was developed where a silicon substrate was precoated with a hydroxyl-terminated random copolymer brush of PS-r-PMMA prior to the HSQ feature formation process. The brush ordains the vertical (to the substrate plane) alignment of the BCP lamellar microdomains. Translational BCP alignment is a result of PMMA selectively wetting the HSQ. The formed BCP pattern was selectively etched to remove the PMMA domain allowing direct imaging and to demonstrate capability in forming an on-chip mask. This journal is © 2013 The Royal Society of Chemistry.
Original language | English |
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Journal | Journal of Materials Chemistry C |
Volume | 1 |
Issue number | 6 |
Pages (from-to) | 1192-1196 |
ISSN | 2050-7526 |
DOIs | |
Publication status | Published - 2013 |
Externally published | Yes |
Keywords
- Alignment
- Block copolymers
- Brushes
- Lamellar structures
- Self assembly
- Electron beam lithography