Direct van der Waals epitaxy of crack-free AlN thin film on epitaxial WS2

Research output: Contribution to journalJournal article – Annual report year: 2018Researchpeer-review

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  • Author: Yin, Yue

    Chinese Academy of Sciences, China

  • Author: Ren, Fang

    Chinese Academy of Sciences, China

  • Author: Wang, Yunyu

    Chinese Academy of Sciences, China

  • Author: Liu, Zhiqiang

    Chinese Academy of Sciences, China

  • Author: Ao, Jinping

    University of Tokushima, Japan

  • Author: Liang, Meng

    Chinese Academy of Sciences, China

  • Author: Wei, Tongbo

    Chinese Academy of Sciences, China

  • Author: Yuan, Guodong

    Chinese Academy of Sciences, China

  • Author: Ou, Haiyan

    Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark, Ørsteds Plads, 2800, Kgs. Lyngby, Denmark

  • Author: Yan, Jianchang

    Chinese Academy of Sciences, China

  • Author: Yi, Xiaoyan

    Chinese Academy of Sciences, China

  • Author: Wang, Junxi

    Chinese Academy of Sciences, China

  • Author: Li, Jinmin

    Chinese Academy of Sciences, China

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Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of IIInitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew highquality single-crystalline AlN thin film on sapphire substrate with an intrinsic W2 overlayer (W2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaNbased deep ultraviolet light emitting diode structure on W2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.
Original languageEnglish
Article number2464
JournalMaterials
Volume11
Issue number12
Number of pages9
ISSN1996-1944
DOIs
Publication statusPublished - 2018
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • W2

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