Abstract
| Original language | English |
|---|---|
| Article number | 2464 |
| Journal | Materials |
| Volume | 11 |
| Issue number | 12 |
| Number of pages | 9 |
| ISSN | 1996-1944 |
| DOIs | |
| Publication status | Published - 2018 |
Keywords
- W2
Cite this
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Direct van der Waals epitaxy of crack-free AlN thin film on epitaxial WS2. / Yin, Yue; Ren, Fang; Wang, Yunyu; Liu, Zhiqiang; Ao, Jinping; Liang, Meng; Wei, Tongbo; Yuan, Guodong; Ou, Haiyan; Yan, Jianchang; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin.
In: Materials, Vol. 11, No. 12, 2464, 2018.Research output: Contribution to journal › Journal article › Research › peer-review
TY - JOUR
T1 - Direct van der Waals epitaxy of crack-free AlN thin film on epitaxial WS2
AU - Yin, Yue
AU - Ren, Fang
AU - Wang, Yunyu
AU - Liu, Zhiqiang
AU - Ao, Jinping
AU - Liang, Meng
AU - Wei, Tongbo
AU - Yuan, Guodong
AU - Ou, Haiyan
AU - Yan, Jianchang
AU - Yi, Xiaoyan
AU - Wang, Junxi
AU - Li, Jinmin
PY - 2018
Y1 - 2018
N2 - Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of IIInitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew highquality single-crystalline AlN thin film on sapphire substrate with an intrinsic W2 overlayer (W2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaNbased deep ultraviolet light emitting diode structure on W2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.
AB - Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of IIInitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew highquality single-crystalline AlN thin film on sapphire substrate with an intrinsic W2 overlayer (W2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaNbased deep ultraviolet light emitting diode structure on W2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.
KW - W2
U2 - 10.3390/ma11122464
DO - 10.3390/ma11122464
M3 - Journal article
VL - 11
JO - Materials
JF - Materials
SN - 1996-1944
IS - 12
M1 - 2464
ER -