Direct van der Waals epitaxy of crack-free AlN thin film on epitaxial WS2

Yue Yin, Fang Ren, Yunyu Wang, Zhiqiang Liu*, Jinping Ao, Meng Liang, Tongbo Wei, Guodong Yuan, Haiyan Ou, Jianchang Yan, Xiaoyan Yi, Junxi Wang, Jinmin Li

*Corresponding author for this work

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Abstract

Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of IIInitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew highquality single-crystalline AlN thin film on sapphire substrate with an intrinsic W2 overlayer (W2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaNbased deep ultraviolet light emitting diode structure on W2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.
Original languageEnglish
Article number2464
JournalMaterials
Volume11
Issue number12
Number of pages9
ISSN1996-1944
DOIs
Publication statusPublished - 2018

Keywords

  • W2

Cite this

Yin, Y., Ren, F., Wang, Y., Liu, Z., Ao, J., Liang, M., ... Li, J. (2018). Direct van der Waals epitaxy of crack-free AlN thin film on epitaxial WS2. Materials, 11(12), [2464]. https://doi.org/10.3390/ma11122464
Yin, Yue ; Ren, Fang ; Wang, Yunyu ; Liu, Zhiqiang ; Ao, Jinping ; Liang, Meng ; Wei, Tongbo ; Yuan, Guodong ; Ou, Haiyan ; Yan, Jianchang ; Yi, Xiaoyan ; Wang, Junxi ; Li, Jinmin. / Direct van der Waals epitaxy of crack-free AlN thin film on epitaxial WS2. In: Materials. 2018 ; Vol. 11, No. 12.
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title = "Direct van der Waals epitaxy of crack-free AlN thin film on epitaxial WS2",
abstract = "Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of IIInitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew highquality single-crystalline AlN thin film on sapphire substrate with an intrinsic W2 overlayer (W2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaNbased deep ultraviolet light emitting diode structure on W2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.",
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author = "Yue Yin and Fang Ren and Yunyu Wang and Zhiqiang Liu and Jinping Ao and Meng Liang and Tongbo Wei and Guodong Yuan and Haiyan Ou and Jianchang Yan and Xiaoyan Yi and Junxi Wang and Jinmin Li",
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Yin, Y, Ren, F, Wang, Y, Liu, Z, Ao, J, Liang, M, Wei, T, Yuan, G, Ou, H, Yan, J, Yi, X, Wang, J & Li, J 2018, 'Direct van der Waals epitaxy of crack-free AlN thin film on epitaxial WS2', Materials, vol. 11, no. 12, 2464. https://doi.org/10.3390/ma11122464

Direct van der Waals epitaxy of crack-free AlN thin film on epitaxial WS2. / Yin, Yue; Ren, Fang; Wang, Yunyu; Liu, Zhiqiang; Ao, Jinping; Liang, Meng; Wei, Tongbo; Yuan, Guodong; Ou, Haiyan; Yan, Jianchang; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin.

In: Materials, Vol. 11, No. 12, 2464, 2018.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Direct van der Waals epitaxy of crack-free AlN thin film on epitaxial WS2

AU - Yin, Yue

AU - Ren, Fang

AU - Wang, Yunyu

AU - Liu, Zhiqiang

AU - Ao, Jinping

AU - Liang, Meng

AU - Wei, Tongbo

AU - Yuan, Guodong

AU - Ou, Haiyan

AU - Yan, Jianchang

AU - Yi, Xiaoyan

AU - Wang, Junxi

AU - Li, Jinmin

PY - 2018

Y1 - 2018

N2 - Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of IIInitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew highquality single-crystalline AlN thin film on sapphire substrate with an intrinsic W2 overlayer (W2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaNbased deep ultraviolet light emitting diode structure on W2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.

AB - Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of IIInitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew highquality single-crystalline AlN thin film on sapphire substrate with an intrinsic W2 overlayer (W2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaNbased deep ultraviolet light emitting diode structure on W2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.

KW - W2

U2 - 10.3390/ma11122464

DO - 10.3390/ma11122464

M3 - Journal article

VL - 11

JO - Materials

JF - Materials

SN - 1996-1944

IS - 12

M1 - 2464

ER -