Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

Takeshi Kasama; M. Thuvander; A. Siusys; L.C. Gontard; A. Kovács; Sadegh Yazdi; M. Duchamp; R.E. Dunin-Borkowski; A. Gustafsson; J. Sadowski

doi:10.1063/11.49276231

Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

Takeshi Kasama, M. Thuvander, A. Siusys, L.C. Gontard, A. Kovács, Sadegh Yazdi, M. Duchamp, R.E. Dunin-Borkowski, A. Gustafsson, J. Sadowski

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Abstract

Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degrees C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography, Mn is found to be incorporated primarily in the form of non-magnetic tetragonal Ga_0.82Mn_0.18 nanocrystals in Ga catalyst droplets at the ends of the NWs, while trace amounts of Mn (22 +/- 4 at. ppm) are also distributed randomly in the NW bodies without forming clusters or precipitates. The nanocrystals are likely to form after switching off the reaction in the MBE chamber, since they are partially embedded in neck regions of the NWs. The Ga_0.82Mn_0.18nanocrystals and the low Mn concentration in the NW bodies are insufficient to induce a ferromagnetic phase transition, suggesting that it is difficult to have high Mn contents in GaAs even in 1-D NW growth via the vapor-liquid-solid process. (C) 2015 AIP Publishing LLC.

Original language	English
Article number	054302
Journal	Journal of Applied Physics
Volume	118
Issue number	5
Number of pages	8
ISSN	0021-8979
DOIs	https://doi.org/10.1063/11.49276231
Publication status	Published - 2015

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title = "Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires",

abstract = "Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degrees C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography, Mn is found to be incorporated primarily in the form of non-magnetic tetragonal Ga0.82Mn0.18 nanocrystals in Ga catalyst droplets at the ends of the NWs, while trace amounts of Mn (22 +/- 4 at. ppm) are also distributed randomly in the NW bodies without forming clusters or precipitates. The nanocrystals are likely to form after switching off the reaction in the MBE chamber, since they are partially embedded in neck regions of the NWs. The Ga0.82Mn0.18 nanocrystals and the low Mn concentration in the NW bodies are insufficient to induce a ferromagnetic phase transition, suggesting that it is difficult to have high Mn contents in GaAs even in 1-D NW growth via the vapor-liquid-solid process. (C) 2015 AIP Publishing LLC.",

author = "Takeshi Kasama and M. Thuvander and A. Siusys and L.C. Gontard and A. Kov{\'a}cs and Sadegh Yazdi and M. Duchamp and R.E. Dunin-Borkowski and A. Gustafsson and J. Sadowski",

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language = "English",

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TY - JOUR

T1 - Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

AU - Kasama, Takeshi

AU - Thuvander, M.

AU - Siusys, A.

AU - Gontard, L.C.

AU - Kovács, A.

AU - Yazdi, Sadegh

AU - Duchamp, M.

AU - Dunin-Borkowski, R.E.

AU - Gustafsson, A.

AU - Sadowski, J.

PY - 2015

Y1 - 2015

N2 - Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degrees C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography, Mn is found to be incorporated primarily in the form of non-magnetic tetragonal Ga0.82Mn0.18 nanocrystals in Ga catalyst droplets at the ends of the NWs, while trace amounts of Mn (22 +/- 4 at. ppm) are also distributed randomly in the NW bodies without forming clusters or precipitates. The nanocrystals are likely to form after switching off the reaction in the MBE chamber, since they are partially embedded in neck regions of the NWs. The Ga0.82Mn0.18 nanocrystals and the low Mn concentration in the NW bodies are insufficient to induce a ferromagnetic phase transition, suggesting that it is difficult to have high Mn contents in GaAs even in 1-D NW growth via the vapor-liquid-solid process. (C) 2015 AIP Publishing LLC.

AB - Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degrees C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography, Mn is found to be incorporated primarily in the form of non-magnetic tetragonal Ga0.82Mn0.18 nanocrystals in Ga catalyst droplets at the ends of the NWs, while trace amounts of Mn (22 +/- 4 at. ppm) are also distributed randomly in the NW bodies without forming clusters or precipitates. The nanocrystals are likely to form after switching off the reaction in the MBE chamber, since they are partially embedded in neck regions of the NWs. The Ga0.82Mn0.18 nanocrystals and the low Mn concentration in the NW bodies are insufficient to induce a ferromagnetic phase transition, suggesting that it is difficult to have high Mn contents in GaAs even in 1-D NW growth via the vapor-liquid-solid process. (C) 2015 AIP Publishing LLC.

U2 - 10.1063/11.49276231

DO - 10.1063/11.49276231

M3 - Journal article

SN - 0021-8979

VL - 118

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 054302

ER -

Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

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