Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si

C. R. Das, S. Dhara, Yeau-Ren Jeng, Ping-Chi Tsai, H. C. Hsu, Baldev Raj, A. K. Bhaduri, S. K. Albert, A. K. Tyagi, L. C. Chen, K. H. Chen

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Indentation at very low load rate showed region of constant volume with releasing load in crystalline (c-)Si, indicating a direct observation of liquidlike amorphous phase which is incompressible under pressure. Signature of amorphization is also confirmed from load dependent indentation study where increased amount of amorphized phase is made responsible for the increasing elastic recovery of the sample with increasing load. Ex situ Raman study confirmed the presence of amorphous phase at the center of indentation. The molecular dynamic simulation has been employed to demonstrate that the effect of indentation velocities has a direct influence on c-Si during nanoindentation processes. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456380]
Original languageEnglish
Article number253113
JournalApplied Physics Letters
Volume96
Issue number25
Number of pages4
ISSN0003-6951
DOIs
Publication statusPublished - 2010
Externally publishedYes

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