Direct Growth Of AlGaN nanorod LEDs on graphene-covered Si

Fang Ren, Yue Yin, Yunyu Wang, Zhiqiang Liu*, Meng Liang, Haiyan Ou, Jinping Ao, Tongbo Wei, Jianchang Yan, Guodong Yuan, Xiaoyan Yi, Junxi Wang, Jinmin Li

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a single-layer graphene-covered Si (111) substrate by metal organic chemical vapor deposition (MOCVD) without a metal catalyst. The nanorods was nucleated by AlGaN nucleation islands with a 35% Al composition, and included n-AlGaN, 6 period of AlGaN multiple quantum wells (MQWs), and p-AlGaN. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) showed that the nanorods were vertically aligned and had an accordant orientation along the [0001] direction. The structure of AlGaN nanorod LEDs was investigated by scanning transmission electron microscopy (STEM). Raman measurements of graphene before and after MOCVD growth revealed the graphene could withstand the high temperature and ammonia atmosphere in MOCVD. Photoluminescence (PL) and cathodoluminescence (CL) characterized an emission at ~325 nm and demonstrated the low defects density in AlGaN nanorod LEDs.

Original languageEnglish
Article number2372
JournalMaterials
Volume11
Issue number12
Number of pages10
ISSN1996-1944
DOIs
Publication statusPublished - 26 Nov 2018

Keywords

  • AlGaN
  • Graphene
  • MOCVD
  • Nanorod LEDs

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