Direct Growth Of AlGaN nanorod LEDs on graphene-covered Si

Fang Ren, Yue Yin, Yunyu Wang, Zhiqiang Liu*, Meng Liang, Haiyan Ou, Jinping Ao, Tongbo Wei, Jianchang Yan, Guodong Yuan, Xiaoyan Yi, Junxi Wang, Jinmin Li

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

147 Downloads (Pure)

Abstract

High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a single-layer graphene-covered Si (111) substrate by metal organic chemical vapor deposition (MOCVD) without a metal catalyst. The nanorods was nucleated by AlGaN nucleation islands with a 35% Al composition, and included n-AlGaN, 6 period of AlGaN multiple quantum wells (MQWs), and p-AlGaN. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) showed that the nanorods were vertically aligned and had an accordant orientation along the [0001] direction. The structure of AlGaN nanorod LEDs was investigated by scanning transmission electron microscopy (STEM). Raman measurements of graphene before and after MOCVD growth revealed the graphene could withstand the high temperature and ammonia atmosphere in MOCVD. Photoluminescence (PL) and cathodoluminescence (CL) characterized an emission at ~325 nm and demonstrated the low defects density in AlGaN nanorod LEDs.

Original languageEnglish
Article number2372
JournalMaterials
Volume11
Issue number12
Number of pages10
ISSN1996-1944
DOIs
Publication statusPublished - 26 Nov 2018

Keywords

  • AlGaN
  • Graphene
  • MOCVD
  • Nanorod LEDs

Cite this

Ren, F., Yin, Y., Wang, Y., Liu, Z., Liang, M., Ou, H., ... Li, J. (2018). Direct Growth Of AlGaN nanorod LEDs on graphene-covered Si. Materials, 11(12), [2372]. https://doi.org/10.3390/ma11122372
Ren, Fang ; Yin, Yue ; Wang, Yunyu ; Liu, Zhiqiang ; Liang, Meng ; Ou, Haiyan ; Ao, Jinping ; Wei, Tongbo ; Yan, Jianchang ; Yuan, Guodong ; Yi, Xiaoyan ; Wang, Junxi ; Li, Jinmin. / Direct Growth Of AlGaN nanorod LEDs on graphene-covered Si. In: Materials. 2018 ; Vol. 11, No. 12.
@article{66b814fab9e94065b52d70b39ff7956c,
title = "Direct Growth Of AlGaN nanorod LEDs on graphene-covered Si",
abstract = "High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a single-layer graphene-covered Si (111) substrate by metal organic chemical vapor deposition (MOCVD) without a metal catalyst. The nanorods was nucleated by AlGaN nucleation islands with a 35{\%} Al composition, and included n-AlGaN, 6 period of AlGaN multiple quantum wells (MQWs), and p-AlGaN. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) showed that the nanorods were vertically aligned and had an accordant orientation along the [0001] direction. The structure of AlGaN nanorod LEDs was investigated by scanning transmission electron microscopy (STEM). Raman measurements of graphene before and after MOCVD growth revealed the graphene could withstand the high temperature and ammonia atmosphere in MOCVD. Photoluminescence (PL) and cathodoluminescence (CL) characterized an emission at ~325 nm and demonstrated the low defects density in AlGaN nanorod LEDs.",
keywords = "AlGaN, Graphene, MOCVD, Nanorod LEDs",
author = "Fang Ren and Yue Yin and Yunyu Wang and Zhiqiang Liu and Meng Liang and Haiyan Ou and Jinping Ao and Tongbo Wei and Jianchang Yan and Guodong Yuan and Xiaoyan Yi and Junxi Wang and Jinmin Li",
year = "2018",
month = "11",
day = "26",
doi = "10.3390/ma11122372",
language = "English",
volume = "11",
journal = "Materials",
issn = "1996-1944",
publisher = "Molecular Diversity Preservation International, MDPI",
number = "12",

}

Ren, F, Yin, Y, Wang, Y, Liu, Z, Liang, M, Ou, H, Ao, J, Wei, T, Yan, J, Yuan, G, Yi, X, Wang, J & Li, J 2018, 'Direct Growth Of AlGaN nanorod LEDs on graphene-covered Si', Materials, vol. 11, no. 12, 2372. https://doi.org/10.3390/ma11122372

Direct Growth Of AlGaN nanorod LEDs on graphene-covered Si. / Ren, Fang; Yin, Yue; Wang, Yunyu; Liu, Zhiqiang; Liang, Meng; Ou, Haiyan; Ao, Jinping; Wei, Tongbo; Yan, Jianchang; Yuan, Guodong; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin.

In: Materials, Vol. 11, No. 12, 2372, 26.11.2018.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Direct Growth Of AlGaN nanorod LEDs on graphene-covered Si

AU - Ren, Fang

AU - Yin, Yue

AU - Wang, Yunyu

AU - Liu, Zhiqiang

AU - Liang, Meng

AU - Ou, Haiyan

AU - Ao, Jinping

AU - Wei, Tongbo

AU - Yan, Jianchang

AU - Yuan, Guodong

AU - Yi, Xiaoyan

AU - Wang, Junxi

AU - Li, Jinmin

PY - 2018/11/26

Y1 - 2018/11/26

N2 - High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a single-layer graphene-covered Si (111) substrate by metal organic chemical vapor deposition (MOCVD) without a metal catalyst. The nanorods was nucleated by AlGaN nucleation islands with a 35% Al composition, and included n-AlGaN, 6 period of AlGaN multiple quantum wells (MQWs), and p-AlGaN. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) showed that the nanorods were vertically aligned and had an accordant orientation along the [0001] direction. The structure of AlGaN nanorod LEDs was investigated by scanning transmission electron microscopy (STEM). Raman measurements of graphene before and after MOCVD growth revealed the graphene could withstand the high temperature and ammonia atmosphere in MOCVD. Photoluminescence (PL) and cathodoluminescence (CL) characterized an emission at ~325 nm and demonstrated the low defects density in AlGaN nanorod LEDs.

AB - High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a single-layer graphene-covered Si (111) substrate by metal organic chemical vapor deposition (MOCVD) without a metal catalyst. The nanorods was nucleated by AlGaN nucleation islands with a 35% Al composition, and included n-AlGaN, 6 period of AlGaN multiple quantum wells (MQWs), and p-AlGaN. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) showed that the nanorods were vertically aligned and had an accordant orientation along the [0001] direction. The structure of AlGaN nanorod LEDs was investigated by scanning transmission electron microscopy (STEM). Raman measurements of graphene before and after MOCVD growth revealed the graphene could withstand the high temperature and ammonia atmosphere in MOCVD. Photoluminescence (PL) and cathodoluminescence (CL) characterized an emission at ~325 nm and demonstrated the low defects density in AlGaN nanorod LEDs.

KW - AlGaN

KW - Graphene

KW - MOCVD

KW - Nanorod LEDs

U2 - 10.3390/ma11122372

DO - 10.3390/ma11122372

M3 - Journal article

VL - 11

JO - Materials

JF - Materials

SN - 1996-1944

IS - 12

M1 - 2372

ER -

Ren F, Yin Y, Wang Y, Liu Z, Liang M, Ou H et al. Direct Growth Of AlGaN nanorod LEDs on graphene-covered Si. Materials. 2018 Nov 26;11(12). 2372. https://doi.org/10.3390/ma11122372