Direct Demonstration of the Emergent Magnetism Resulting from the Multivalence Mn in a LaMnO3 Epitaxial Thin Film System

Wei Niu, Wenqing Liu, Min Gu, Yongda Chen, Xiaoqian Zhang, Minhao Zhang, Yequan Chen, Ji Wang, Jun Du, Fengqi Song, Xiaoqing Pan, Nini Pryds, Xuefeng Wang, Peng Wang, Yongbing Xu, Yunzhong Chen*, Rong Zhang

*Corresponding author for this work

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Abstract

Atomically engineered oxide heterostructures provide a fertile ground for creating novel states, for example, a 2D electron gas at the interface between two oxide insulators, giant thermoelectric Seebeck coefficient, emergent ferromagnetism from otherwise nonmagnetic components, and colossal ionic conductivity. Extensive research efforts reveal that oxygen deficiency or lattice strain play an important role in determining these unexpected properties. Herein, by studying the abrupt presence of robust ferromagnetism (up to 1.5 µB/Mn) in LaMnO3‐based heterostructures, the multivalence states of Mn that play a decisive role in the emergence of ferromagnetism in the otherwise antiferromagnetic LaMnO3 thin films are found. Combining spatially resolved electron energy‐loss spectroscopy, X‐ray absorption spectroscopy, and X‐ray magnetic circular dichroism techniques, it is determined unambiguously that the ferromagnetism results from a conventional Mn3+‐O‐Mn4+ double‐exchange mechanism rather than an interfacial effect. In contrast, the magnetic dead layer of 5 unit cell in proximity to the interface is found to be accompanied with the accumulation of Mn2+ induced by electronic reconstruction. These findings provide a hitherto‐unexplored multivalence state of Mn on the emergent magnetism in undoped manganite epitaxial thin films, such as LaMnO3 and BiMnO3, and shed new light on all‐oxide spintronic devices.
Original languageEnglish
Article number1800055
JournalAdvanced Electronic Materials
Volume4
Issue number6
Pages (from-to)1-9
DOIs
Publication statusPublished - 2018

Cite this

Niu, Wei ; Liu, Wenqing ; Gu, Min ; Chen, Yongda ; Zhang, Xiaoqian ; Zhang, Minhao ; Chen, Yequan ; Wang, Ji ; Du, Jun ; Song, Fengqi ; Pan, Xiaoqing ; Pryds, Nini ; Wang, Xuefeng ; Wang, Peng ; Xu, Yongbing ; Chen, Yunzhong ; Zhang, Rong . / Direct Demonstration of the Emergent Magnetism Resulting from the Multivalence Mn in a LaMnO3 Epitaxial Thin Film System. In: Advanced Electronic Materials. 2018 ; Vol. 4, No. 6. pp. 1-9.
@article{b6fa689ccbac40fbba88c8ac120d457f,
title = "Direct Demonstration of the Emergent Magnetism Resulting from the Multivalence Mn in a LaMnO3 Epitaxial Thin Film System",
abstract = "Atomically engineered oxide heterostructures provide a fertile ground for creating novel states, for example, a 2D electron gas at the interface between two oxide insulators, giant thermoelectric Seebeck coefficient, emergent ferromagnetism from otherwise nonmagnetic components, and colossal ionic conductivity. Extensive research efforts reveal that oxygen deficiency or lattice strain play an important role in determining these unexpected properties. Herein, by studying the abrupt presence of robust ferromagnetism (up to 1.5 µB/Mn) in LaMnO3‐based heterostructures, the multivalence states of Mn that play a decisive role in the emergence of ferromagnetism in the otherwise antiferromagnetic LaMnO3 thin films are found. Combining spatially resolved electron energy‐loss spectroscopy, X‐ray absorption spectroscopy, and X‐ray magnetic circular dichroism techniques, it is determined unambiguously that the ferromagnetism results from a conventional Mn3+‐O‐Mn4+ double‐exchange mechanism rather than an interfacial effect. In contrast, the magnetic dead layer of 5 unit cell in proximity to the interface is found to be accompanied with the accumulation of Mn2+ induced by electronic reconstruction. These findings provide a hitherto‐unexplored multivalence state of Mn on the emergent magnetism in undoped manganite epitaxial thin films, such as LaMnO3 and BiMnO3, and shed new light on all‐oxide spintronic devices.",
author = "Wei Niu and Wenqing Liu and Min Gu and Yongda Chen and Xiaoqian Zhang and Minhao Zhang and Yequan Chen and Ji Wang and Jun Du and Fengqi Song and Xiaoqing Pan and Nini Pryds and Xuefeng Wang and Peng Wang and Yongbing Xu and Yunzhong Chen and Rong Zhang",
year = "2018",
doi = "10.1002/aelm.201800055",
language = "English",
volume = "4",
pages = "1--9",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley-VCH",
number = "6",

}

Niu, W, Liu, W, Gu, M, Chen, Y, Zhang, X, Zhang, M, Chen, Y, Wang, J, Du, J, Song, F, Pan, X, Pryds, N, Wang, X, Wang, P, Xu, Y, Chen, Y & Zhang, R 2018, 'Direct Demonstration of the Emergent Magnetism Resulting from the Multivalence Mn in a LaMnO3 Epitaxial Thin Film System', Advanced Electronic Materials, vol. 4, no. 6, 1800055, pp. 1-9. https://doi.org/10.1002/aelm.201800055

Direct Demonstration of the Emergent Magnetism Resulting from the Multivalence Mn in a LaMnO3 Epitaxial Thin Film System. / Niu, Wei ; Liu, Wenqing; Gu, Min; Chen, Yongda ; Zhang, Xiaoqian ; Zhang, Minhao ; Chen, Yequan ; Wang, Ji ; Du, Jun; Song, Fengqi ; Pan, Xiaoqing ; Pryds, Nini; Wang, Xuefeng ; Wang, Peng ; Xu, Yongbing ; Chen, Yunzhong; Zhang, Rong .

In: Advanced Electronic Materials, Vol. 4, No. 6, 1800055, 2018, p. 1-9.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Direct Demonstration of the Emergent Magnetism Resulting from the Multivalence Mn in a LaMnO3 Epitaxial Thin Film System

AU - Niu, Wei

AU - Liu, Wenqing

AU - Gu, Min

AU - Chen, Yongda

AU - Zhang, Xiaoqian

AU - Zhang, Minhao

AU - Chen, Yequan

AU - Wang, Ji

AU - Du, Jun

AU - Song, Fengqi

AU - Pan, Xiaoqing

AU - Pryds, Nini

AU - Wang, Xuefeng

AU - Wang, Peng

AU - Xu, Yongbing

AU - Chen, Yunzhong

AU - Zhang, Rong

PY - 2018

Y1 - 2018

N2 - Atomically engineered oxide heterostructures provide a fertile ground for creating novel states, for example, a 2D electron gas at the interface between two oxide insulators, giant thermoelectric Seebeck coefficient, emergent ferromagnetism from otherwise nonmagnetic components, and colossal ionic conductivity. Extensive research efforts reveal that oxygen deficiency or lattice strain play an important role in determining these unexpected properties. Herein, by studying the abrupt presence of robust ferromagnetism (up to 1.5 µB/Mn) in LaMnO3‐based heterostructures, the multivalence states of Mn that play a decisive role in the emergence of ferromagnetism in the otherwise antiferromagnetic LaMnO3 thin films are found. Combining spatially resolved electron energy‐loss spectroscopy, X‐ray absorption spectroscopy, and X‐ray magnetic circular dichroism techniques, it is determined unambiguously that the ferromagnetism results from a conventional Mn3+‐O‐Mn4+ double‐exchange mechanism rather than an interfacial effect. In contrast, the magnetic dead layer of 5 unit cell in proximity to the interface is found to be accompanied with the accumulation of Mn2+ induced by electronic reconstruction. These findings provide a hitherto‐unexplored multivalence state of Mn on the emergent magnetism in undoped manganite epitaxial thin films, such as LaMnO3 and BiMnO3, and shed new light on all‐oxide spintronic devices.

AB - Atomically engineered oxide heterostructures provide a fertile ground for creating novel states, for example, a 2D electron gas at the interface between two oxide insulators, giant thermoelectric Seebeck coefficient, emergent ferromagnetism from otherwise nonmagnetic components, and colossal ionic conductivity. Extensive research efforts reveal that oxygen deficiency or lattice strain play an important role in determining these unexpected properties. Herein, by studying the abrupt presence of robust ferromagnetism (up to 1.5 µB/Mn) in LaMnO3‐based heterostructures, the multivalence states of Mn that play a decisive role in the emergence of ferromagnetism in the otherwise antiferromagnetic LaMnO3 thin films are found. Combining spatially resolved electron energy‐loss spectroscopy, X‐ray absorption spectroscopy, and X‐ray magnetic circular dichroism techniques, it is determined unambiguously that the ferromagnetism results from a conventional Mn3+‐O‐Mn4+ double‐exchange mechanism rather than an interfacial effect. In contrast, the magnetic dead layer of 5 unit cell in proximity to the interface is found to be accompanied with the accumulation of Mn2+ induced by electronic reconstruction. These findings provide a hitherto‐unexplored multivalence state of Mn on the emergent magnetism in undoped manganite epitaxial thin films, such as LaMnO3 and BiMnO3, and shed new light on all‐oxide spintronic devices.

U2 - 10.1002/aelm.201800055

DO - 10.1002/aelm.201800055

M3 - Journal article

VL - 4

SP - 1

EP - 9

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

IS - 6

M1 - 1800055

ER -