Direct bonding of ALD Al2O3 to silicon nitride thin films

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Direct bonding is an advanced joining technique for bonding of silicon based surfaces at low temperature without any specific surface pretreatment. The main purpose of this work is to develop new techniques to enhance the fabrication process for nanofluidic systems for in situ transmission electron microscopy (TEM) by improving low temperature annealing bonding strength when using atomic layer deposition of aluminum oxide. We have investigated and characterized bonding of Al2O3-SixNy (low stress silicon rich nitride) and Al2O3-Si3N(stoichiometric nitride) thin films annealed from room temperature up to 600 degrees C without pretreatment prior to the pre bonding. We find that bonding of Al2O3-SixNy and Al2O3-Si3N4 is favorable in a temperature range from room temperature to 600 °C. We report bonding strength of 1300±150 mJ/m2 comparable to and in some case even higher than that of other materials Al2O3 can be bonded to. Preliminary tests demonstrating a well-defined nanochannel system with-100 nm high channels successfully bonded and tests against leaks using optical fluorescence technique and transmission electron microscopy (TEM) characterization of liquid samples are also reported. Moreover, the current bonding method can be also used for further MEMS applications. 
Original languageEnglish
JournalMicroelectronic Engineering
Volume176
Pages (from-to)71-74
Number of pages4
ISSN0167-9317
DOIs
Publication statusPublished - 2017

Keywords

  • Direct bonding
  • AID
  • Silicon nitride
  • TEM

Cite this

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title = "Direct bonding of ALD Al2O3 to silicon nitride thin films",
abstract = "Direct bonding is an advanced joining technique for bonding of silicon based surfaces at low temperature without any specific surface pretreatment. The main purpose of this work is to develop new techniques to enhance the fabrication process for nanofluidic systems for in situ transmission electron microscopy (TEM) by improving low temperature annealing bonding strength when using atomic layer deposition of aluminum oxide. We have investigated and characterized bonding of Al2O3-SixNy (low stress silicon rich nitride) and Al2O3-Si3N4 (stoichiometric nitride) thin films annealed from room temperature up to 600 degrees C without pretreatment prior to the pre bonding. We find that bonding of Al2O3-SixNy and Al2O3-Si3N4 is favorable in a temperature range from room temperature to 600 °C. We report bonding strength of 1300±150 mJ/m2 comparable to and in some case even higher than that of other materials Al2O3 can be bonded to. Preliminary tests demonstrating a well-defined nanochannel system with-100 nm high channels successfully bonded and tests against leaks using optical fluorescence technique and transmission electron microscopy (TEM) characterization of liquid samples are also reported. Moreover, the current bonding method can be also used for further MEMS applications. ",
keywords = "Direct bonding, AID, Silicon nitride, TEM",
author = "Simone Lagan{\`a} and Mikkelsen, {E. K.} and Rodolphe Marie and Ole Hansen and Kristian M{\o}lhave",
year = "2017",
doi = "10.1016/j.mee.2017.01.038",
language = "English",
volume = "176",
pages = "71--74",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

Direct bonding of ALD Al2O3 to silicon nitride thin films. / Laganà, Simone; Mikkelsen, E. K.; Marie, Rodolphe ; Hansen, Ole; Mølhave, Kristian.

In: Microelectronic Engineering, Vol. 176, 2017, p. 71-74.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Direct bonding of ALD Al2O3 to silicon nitride thin films

AU - Laganà, Simone

AU - Mikkelsen, E. K.

AU - Marie, Rodolphe

AU - Hansen, Ole

AU - Mølhave, Kristian

PY - 2017

Y1 - 2017

N2 - Direct bonding is an advanced joining technique for bonding of silicon based surfaces at low temperature without any specific surface pretreatment. The main purpose of this work is to develop new techniques to enhance the fabrication process for nanofluidic systems for in situ transmission electron microscopy (TEM) by improving low temperature annealing bonding strength when using atomic layer deposition of aluminum oxide. We have investigated and characterized bonding of Al2O3-SixNy (low stress silicon rich nitride) and Al2O3-Si3N4 (stoichiometric nitride) thin films annealed from room temperature up to 600 degrees C without pretreatment prior to the pre bonding. We find that bonding of Al2O3-SixNy and Al2O3-Si3N4 is favorable in a temperature range from room temperature to 600 °C. We report bonding strength of 1300±150 mJ/m2 comparable to and in some case even higher than that of other materials Al2O3 can be bonded to. Preliminary tests demonstrating a well-defined nanochannel system with-100 nm high channels successfully bonded and tests against leaks using optical fluorescence technique and transmission electron microscopy (TEM) characterization of liquid samples are also reported. Moreover, the current bonding method can be also used for further MEMS applications. 

AB - Direct bonding is an advanced joining technique for bonding of silicon based surfaces at low temperature without any specific surface pretreatment. The main purpose of this work is to develop new techniques to enhance the fabrication process for nanofluidic systems for in situ transmission electron microscopy (TEM) by improving low temperature annealing bonding strength when using atomic layer deposition of aluminum oxide. We have investigated and characterized bonding of Al2O3-SixNy (low stress silicon rich nitride) and Al2O3-Si3N4 (stoichiometric nitride) thin films annealed from room temperature up to 600 degrees C without pretreatment prior to the pre bonding. We find that bonding of Al2O3-SixNy and Al2O3-Si3N4 is favorable in a temperature range from room temperature to 600 °C. We report bonding strength of 1300±150 mJ/m2 comparable to and in some case even higher than that of other materials Al2O3 can be bonded to. Preliminary tests demonstrating a well-defined nanochannel system with-100 nm high channels successfully bonded and tests against leaks using optical fluorescence technique and transmission electron microscopy (TEM) characterization of liquid samples are also reported. Moreover, the current bonding method can be also used for further MEMS applications. 

KW - Direct bonding

KW - AID

KW - Silicon nitride

KW - TEM

U2 - 10.1016/j.mee.2017.01.038

DO - 10.1016/j.mee.2017.01.038

M3 - Journal article

VL - 176

SP - 71

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -