Direct Band Gap AlGaAs Wurtzite Nanowires

Daniele Barettin*, Igor V. Shtrom, Rodion R. Reznik, Sergey V. Mikushev, George E. Cirlin, Matthias Auf der Maur, Nika Akopian

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Wurtzite AlGaAs is a technologically promising yet unexplored material. Here we study it both experimentally and numerically. We develop a complete numerical model based on an 8-band Formula Presented method, including electromechanical fields, and calculate the optoelectronic properties of wurtzite AlGaAs nanowires with different Al content. We then compare them with our experimental data. Our results strongly suggest that wurtzite AlGaAs is a direct band gap material. Moreover, we have also numerically obtained the band gap of wurtzite AlAs and the valence band offset between AlAs and GaAs in the wurtzite symmetry.

Original languageEnglish
JournalNano Letters
Volume23
Issue number3
Pages (from-to)895-901
ISSN1530-6984
DOIs
Publication statusPublished - 8 Feb 2023

Keywords

  • GaAs/AlGaAs
  • k⃗·p⃗
  • Modeling
  • Nanowires
  • Wurtize

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