Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics

F. I. Zubov; A. E. Zhukov; Yu M. Shernyakov; M. V. Maximov; Elizaveta Semenova; L. V. Asryan

doi:10.1088/1742-6596/643/1/012042

Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics

F. I. Zubov
, A. E. Zhukov
, Yu M. Shernyakov
, M. V. Maximov
, Elizaveta Semenova
, L. V. Asryan

Russian Academy of Sciences
St. Petersburg Academic University
Virginia Polytechnic Institute and State University

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and thus improve its power characteristics under high current injection. The results are presented for 850-nm AlGaAs/GaAs broad-area lasers with GaInP and AlInGaAs asymmetric barriers.

Original language	English
Article number	012042
Book series	Journal of Physics: Conference Series
Volume	643
Issue number	1
Number of pages	6
ISSN	1742-6596
DOIs	https://doi.org/10.1088/1742-6596/643/1/012042
Publication status	Published - 2015

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Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. Published under licence by IOP Publishing Ltd

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title = "Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics",

abstract = "It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and thus improve its power characteristics under high current injection. The results are presented for 850-nm AlGaAs/GaAs broad-area lasers with GaInP and AlInGaAs asymmetric barriers.",

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T1 - Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics

AU - Zubov, F. I.

AU - Zhukov, A. E.

AU - Shernyakov, Yu M.

AU - Maximov, M. V.

AU - Semenova, Elizaveta

AU - Asryan, L. V.

N1 - Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. Published under licence by IOP Publishing Ltd

PY - 2015

Y1 - 2015

N2 - It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and thus improve its power characteristics under high current injection. The results are presented for 850-nm AlGaAs/GaAs broad-area lasers with GaInP and AlInGaAs asymmetric barriers.

AB - It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and thus improve its power characteristics under high current injection. The results are presented for 850-nm AlGaAs/GaAs broad-area lasers with GaInP and AlInGaAs asymmetric barriers.

U2 - 10.1088/1742-6596/643/1/012042

DO - 10.1088/1742-6596/643/1/012042

M3 - Journal article

SN - 1742-6596

VL - 643

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012042

ER -

Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics

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