It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and thus improve its power characteristics under high current injection. The results are presented for 850-nm AlGaAs/GaAs broad-area lasers with GaInP and AlInGaAs asymmetric barriers.
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Zubov, F. I., Zhukov, A. E., Shernyakov, Y. M., Maximov, M. V., Semenova, E., & Asryan, L. V. (2015). Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics. Journal of Physics: Conference Series, 643(1), . https://doi.org/10.1088/1742-6596/643/1/012042