Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics

F. I. Zubov, A. E. Zhukov, Yu M. Shernyakov, M. V. Maximov, Elizaveta Semenova, L. V. Asryan

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It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and thus improve its power characteristics under high current injection. The results are presented for 850-nm AlGaAs/GaAs broad-area lasers with GaInP and AlInGaAs asymmetric barriers.
Original languageEnglish
Article number012042
Book seriesJournal of Physics: Conference Series
Issue number1
Number of pages6
Publication statusPublished - 2015

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