Diluted Oxide Interfaces with Tunable Ground States

Yulin Gan, Dennis Valbjørn Christensen, Yu Zhang, Hongrui Zhang, Krishnan Dileep, Zhicheng Zhong, Wei Niu, Damon James Carrad, Kion Norrman, Merlin von Soosten, Thomas Sand Jespersen, Baogen Shen, Nicolas Gauquelin, Johan Verbeeck, Jirong Sun, Nini Pryds, Yunzhong Chen*

*Corresponding author for this work

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Abstract

The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal‐insulator transitions remains challenging. Here, an unforeseen tunability of the phase diagram of LAO/STO is reported by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn‐doping level, x, of LaAl1−xMnxO3/STO (0 ≤ x ≤ 1), the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of nc = 2.8 × 1013 cm−2, where a peak TSC ≈255 mK of superconducting transition temperature is observed. Moreover, the LaAl1−xMnxO3 turns ferromagnetic at x ≥ 0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only dxy electrons and just before it becomes insulating, a same device with both signatures of superconductivity and clear anomalous Hall effect (7.6 × 1012 cm−2 < ns ≤ 1.1 × 1013 cm−2) is achieved reproducibly. This provides a unique and effective way to tailor oxide interfaces for designing on‐demand electronic and spintronic devices.
Original languageEnglish
Article number1805970
JournalAdvanced Materials
Volume31
Issue number10
Number of pages24
ISSN0935-9648
DOIs
Publication statusPublished - 2019

Keywords

  • 2D electron liquid
  • Anomalous Hall effect
  • Metal-insulator transitions
  • Oxide interfaces
  • Superconductivity

Cite this

Gan, Yulin ; Christensen, Dennis Valbjørn ; Zhang, Yu ; Zhang, Hongrui ; Dileep, Krishnan ; Zhong, Zhicheng ; Niu, Wei ; Carrad, Damon James ; Norrman, Kion ; von Soosten, Merlin ; Sand Jespersen, Thomas ; Shen, Baogen ; Gauquelin, Nicolas ; Verbeeck, Johan ; Sun, Jirong ; Pryds, Nini ; Chen, Yunzhong. / Diluted Oxide Interfaces with Tunable Ground States. In: Advanced Materials. 2019 ; Vol. 31, No. 10.
@article{3bba5ec7588c4254857b370f5829db52,
title = "Diluted Oxide Interfaces with Tunable Ground States",
abstract = "The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal‐insulator transitions remains challenging. Here, an unforeseen tunability of the phase diagram of LAO/STO is reported by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn‐doping level, x, of LaAl1−xMnxO3/STO (0 ≤ x ≤ 1), the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of nc = 2.8 × 1013 cm−2, where a peak TSC ≈255 mK of superconducting transition temperature is observed. Moreover, the LaAl1−xMnxO3 turns ferromagnetic at x ≥ 0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only dxy electrons and just before it becomes insulating, a same device with both signatures of superconductivity and clear anomalous Hall effect (7.6 × 1012 cm−2 < ns ≤ 1.1 × 1013 cm−2) is achieved reproducibly. This provides a unique and effective way to tailor oxide interfaces for designing on‐demand electronic and spintronic devices.",
keywords = "2D electron liquid, Anomalous Hall effect, Metal-insulator transitions, Oxide interfaces, Superconductivity",
author = "Yulin Gan and Christensen, {Dennis Valbj{\o}rn} and Yu Zhang and Hongrui Zhang and Krishnan Dileep and Zhicheng Zhong and Wei Niu and Carrad, {Damon James} and Kion Norrman and {von Soosten}, Merlin and {Sand Jespersen}, Thomas and Baogen Shen and Nicolas Gauquelin and Johan Verbeeck and Jirong Sun and Nini Pryds and Yunzhong Chen",
year = "2019",
doi = "10.1002/adma.201805970",
language = "English",
volume = "31",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley - V C H Verlag GmbH & Co. KGaA",
number = "10",

}

Gan, Y, Christensen, DV, Zhang, Y, Zhang, H, Dileep, K, Zhong, Z, Niu, W, Carrad, DJ, Norrman, K, von Soosten, M, Sand Jespersen, T, Shen, B, Gauquelin, N, Verbeeck, J, Sun, J, Pryds, N & Chen, Y 2019, 'Diluted Oxide Interfaces with Tunable Ground States', Advanced Materials, vol. 31, no. 10, 1805970 . https://doi.org/10.1002/adma.201805970

Diluted Oxide Interfaces with Tunable Ground States. / Gan, Yulin; Christensen, Dennis Valbjørn; Zhang, Yu ; Zhang, Hongrui ; Dileep, Krishnan ; Zhong, Zhicheng ; Niu, Wei ; Carrad, Damon James; Norrman, Kion; von Soosten, Merlin; Sand Jespersen, Thomas ; Shen, Baogen; Gauquelin, Nicolas ; Verbeeck, Johan ; Sun, Jirong; Pryds, Nini; Chen, Yunzhong.

In: Advanced Materials, Vol. 31, No. 10, 1805970 , 2019.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Diluted Oxide Interfaces with Tunable Ground States

AU - Gan, Yulin

AU - Christensen, Dennis Valbjørn

AU - Zhang, Yu

AU - Zhang, Hongrui

AU - Dileep, Krishnan

AU - Zhong, Zhicheng

AU - Niu, Wei

AU - Carrad, Damon James

AU - Norrman, Kion

AU - von Soosten, Merlin

AU - Sand Jespersen, Thomas

AU - Shen, Baogen

AU - Gauquelin, Nicolas

AU - Verbeeck, Johan

AU - Sun, Jirong

AU - Pryds, Nini

AU - Chen, Yunzhong

PY - 2019

Y1 - 2019

N2 - The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal‐insulator transitions remains challenging. Here, an unforeseen tunability of the phase diagram of LAO/STO is reported by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn‐doping level, x, of LaAl1−xMnxO3/STO (0 ≤ x ≤ 1), the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of nc = 2.8 × 1013 cm−2, where a peak TSC ≈255 mK of superconducting transition temperature is observed. Moreover, the LaAl1−xMnxO3 turns ferromagnetic at x ≥ 0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only dxy electrons and just before it becomes insulating, a same device with both signatures of superconductivity and clear anomalous Hall effect (7.6 × 1012 cm−2 < ns ≤ 1.1 × 1013 cm−2) is achieved reproducibly. This provides a unique and effective way to tailor oxide interfaces for designing on‐demand electronic and spintronic devices.

AB - The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal‐insulator transitions remains challenging. Here, an unforeseen tunability of the phase diagram of LAO/STO is reported by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn‐doping level, x, of LaAl1−xMnxO3/STO (0 ≤ x ≤ 1), the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of nc = 2.8 × 1013 cm−2, where a peak TSC ≈255 mK of superconducting transition temperature is observed. Moreover, the LaAl1−xMnxO3 turns ferromagnetic at x ≥ 0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only dxy electrons and just before it becomes insulating, a same device with both signatures of superconductivity and clear anomalous Hall effect (7.6 × 1012 cm−2 < ns ≤ 1.1 × 1013 cm−2) is achieved reproducibly. This provides a unique and effective way to tailor oxide interfaces for designing on‐demand electronic and spintronic devices.

KW - 2D electron liquid

KW - Anomalous Hall effect

KW - Metal-insulator transitions

KW - Oxide interfaces

KW - Superconductivity

U2 - 10.1002/adma.201805970

DO - 10.1002/adma.201805970

M3 - Journal article

C2 - 30637817

VL - 31

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

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