Dilute bismides for near and mid-infrared applications

Yuxin Song; Yi Gu; Hong Ye; Peixiong Shi; Anders Hallen; Xiren Chen; Jun Shao; Shumin Wang

doi:10.1109/ICTON.2013.6602735

Dilute bismides for near and mid-infrared applications

Yuxin Song
, Yi Gu
, Hong Ye
, Peixiong Shi
, Anders Hallen
, Xiren Chen
, Jun Shao
, Shumin Wang

Chalmers University of Technology
KTH Royal Institute of Technology
Chinese Academy of Sciences

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III–V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized.

Original language	English
Title of host publication	Proceedings of International Conference on Transparent Optical Networks (ICTON)
Publisher	IEEE
Publication date	2013
ISBN (Electronic)	978-1-4799-0683-3
DOIs	https://doi.org/10.1109/ICTON.2013.6602735
Publication status	Published - 2013
Event	15th International Conference on Transparent Optical Networks (ICTON) - Cartagena, Spain Duration: 23 Jun 2013 → 27 Jun 2013 http://www.ait.upct.es/icton2013/

Conference

Conference	15th International Conference on Transparent Optical Networks (ICTON)
Country/Territory	Spain
City	Cartagena
Period	23/06/2013 → 27/06/2013
Internet address	http://www.ait.upct.es/icton2013/

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@inproceedings{ac02c7e2cd7a4fdcb348d52e7581cd0d,

title = "Dilute bismides for near and mid-infrared applications",

abstract = "Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III{\textendash}V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized.",

author = "Yuxin Song and Yi Gu and Hong Ye and Peixiong Shi and Anders Hallen and Xiren Chen and Jun Shao and Shumin Wang",

year = "2013",

doi = "10.1109/ICTON.2013.6602735",

language = "English",

booktitle = "Proceedings of International Conference on Transparent Optical Networks (ICTON)",

publisher = "IEEE",

address = "United States",

note = "15th International Conference on Transparent Optical Networks (ICTON) ; Conference date: 23-06-2013 Through 27-06-2013",

url = "http://www.ait.upct.es/icton2013/",

}

TY - GEN

T1 - Dilute bismides for near and mid-infrared applications

AU - Song, Yuxin

AU - Gu, Yi

AU - Ye, Hong

AU - Shi, Peixiong

AU - Hallen, Anders

AU - Chen, Xiren

AU - Shao, Jun

AU - Wang, Shumin

PY - 2013

Y1 - 2013

N2 - Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III–V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized.

AB - Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III–V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized.

U2 - 10.1109/ICTON.2013.6602735

DO - 10.1109/ICTON.2013.6602735

M3 - Article in proceedings

BT - Proceedings of International Conference on Transparent Optical Networks (ICTON)

PB - IEEE

T2 - 15th International Conference on Transparent Optical Networks (ICTON)

Y2 - 23 June 2013 through 27 June 2013

ER -

Dilute bismides for near and mid-infrared applications

Abstract

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