Dilute bismides for near and mid-infrared applications

Yuxin Song, Yi Gu, Hong Ye, Peixiong Shi, Anders Hallen, Xiren Chen, Jun Shao, Shumin Wang

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III–V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized.
    Original languageEnglish
    Title of host publicationProceedings of International Conference on Transparent Optical Networks (ICTON)
    PublisherIEEE
    Publication date2013
    ISBN (Electronic)978-1-4799-0683-3
    DOIs
    Publication statusPublished - 2013
    Event15th International Conference on Transparent Optical Networks (ICTON) - Cartagena, Spain
    Duration: 23 Jun 201327 Jun 2013
    http://www.ait.upct.es/icton2013/

    Conference

    Conference15th International Conference on Transparent Optical Networks (ICTON)
    CountrySpain
    CityCartagena
    Period23/06/201327/06/2013
    Internet address

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