Diffusion of phosphorous in black silicon

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Black silicon is a promising texturing method for solar cells since it suppresses optical reflection in a broad spectral range. This relaxes the usual antireflection requirements on the coatings used for surface passivation of silicon. Fabrication of n-type emitters requires diffusion of phosphorous through the nanostructures of black silicon, which may need different optimal conditions as compared to diffusion through e.g. pyramidal wet-etched
structures due to the different characteristic dimensions. In addition, the diffusion process should ideally not deteriorate the antireflective properties of black silicon. Here, we have investigated the effect of temperature and time during the doping process on optical reflectance and sheet resistance of black silicon. Doping temperatures of 875 °C and lower result in negligible increase of reflectance as compared to pristine black silicon. In addition, the sheet resistance of black silicon emitters is confirmed to be lower than that of planar Si under identical annealing conditions.
Original languageEnglish
Title of host publication 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
Number of pages4
PublisherIEEE
Publication date2018
ISBN (Electronic)978-1-5386-8529-7
DOIs
Publication statusPublished - 2018
Event7th World Conference on Photovoltaic Energy Conversion - Hilton Waikoloa Village Resort, Waikoloa, United States
Duration: 10 Jun 201815 Jun 2018
Conference number: WCPEC-7

Conference

Conference7th World Conference on Photovoltaic Energy Conversion
NumberWCPEC-7
LocationHilton Waikoloa Village Resort
CountryUnited States
CityWaikoloa
Period10/06/201815/06/2018
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • black silicon, Phosphorous emitter, Diffusion

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