Diffusion of phosphorous in black silicon

Andreas R. Stilling-Andersen; Olga  Solodovnikova; Rasmus S. Davidsen; Ole Hansen; Beniamino Iandolo

doi:10.1109/PVSC.2018.8548096

Diffusion of phosphorous in black silicon

Andreas R. Stilling-Andersen, Olga Solodovnikova, Rasmus S. Davidsen, Ole Hansen, Beniamino Iandolo

Technical University of Denmark

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

Black silicon is a promising texturing method for solar cells since it suppresses optical reflection in a broad spectral range. This relaxes the usual antireflection requirements on the coatings used for surface passivation of silicon. Fabrication of n-type emitters requires diffusion of phosphorous through the nanostructures of black silicon, which may need different optimal conditions as compared to diffusion through e.g. pyramidal wet-etched
structures due to the different characteristic dimensions. In addition, the diffusion process should ideally not deteriorate the antireflective properties of black silicon. Here, we have investigated the effect of temperature and time during the doping process on optical reflectance and sheet resistance of black silicon. Doping temperatures of 875 °C and lower result in negligible increase of reflectance as compared to pristine black silicon. In addition, the sheet resistance of black silicon emitters is confirmed to be lower than that of planar Si under identical annealing conditions.

Original language	English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
Number of pages	4
Publisher	IEEE
Publication date	2018
ISBN (Electronic)	978-1-5386-8529-7
DOIs	https://doi.org/10.1109/PVSC.2018.8548096
Publication status	Published - 2018
Event	7th World Conference on Photovoltaic Energy Conversion - Hilton Waikoloa Village Resort, Waikoloa, United States Duration: 10 Jun 2018 → 15 Jun 2018 Conference number: WCPEC-7

Conference

Conference	7th World Conference on Photovoltaic Energy Conversion
Number	WCPEC-7
Location	Hilton Waikoloa Village Resort
Country/Territory	United States
City	Waikoloa
Period	10/06/2018 → 15/06/2018

Keywords

black silicon
Phosphorous emitter
Diffusion

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10.1109/PVSC.2018.8548096

Iandolo 2018 WCPEC7 proceedings P in black SiAccepted author manuscript, 985 KB

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title = "Diffusion of phosphorous in black silicon",

abstract = "Black silicon is a promising texturing method for solar cells since it suppresses optical reflection in a broad spectral range. This relaxes the usual antireflection requirements on the coatings used for surface passivation of silicon. Fabrication of n-type emitters requires diffusion of phosphorous through the nanostructures of black silicon, which may need different optimal conditions as compared to diffusion through e.g. pyramidal wet-etched structures due to the different characteristic dimensions. In addition, the diffusion process should ideally not deteriorate the antireflective properties of black silicon. Here, we have investigated the effect of temperature and time during the doping process on optical reflectance and sheet resistance of black silicon. Doping temperatures of 875 °C and lower result in negligible increase of reflectance as compared to pristine black silicon. In addition, the sheet resistance of black silicon emitters is confirmed to be lower than that of planar Si under identical annealing conditions. ",

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Stilling-Andersen, AR, Solodovnikova, O, Davidsen, RS, Hansen, O & Iandolo, B 2018, Diffusion of phosphorous in black silicon. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 7th World Conference on Photovoltaic Energy Conversion , Waikoloa, Hawaii, United States, 10/06/2018. https://doi.org/10.1109/PVSC.2018.8548096

Diffusion of phosphorous in black silicon. / Stilling-Andersen, Andreas R.; Solodovnikova, Olga ; Davidsen, Rasmus S. et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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T1 - Diffusion of phosphorous in black silicon

AU - Stilling-Andersen, Andreas R.

AU - Solodovnikova, Olga

AU - Davidsen, Rasmus S.

AU - Hansen, Ole

AU - Iandolo, Beniamino

N1 - Conference code: WCPEC-7

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Y1 - 2018

N2 - Black silicon is a promising texturing method for solar cells since it suppresses optical reflection in a broad spectral range. This relaxes the usual antireflection requirements on the coatings used for surface passivation of silicon. Fabrication of n-type emitters requires diffusion of phosphorous through the nanostructures of black silicon, which may need different optimal conditions as compared to diffusion through e.g. pyramidal wet-etched structures due to the different characteristic dimensions. In addition, the diffusion process should ideally not deteriorate the antireflective properties of black silicon. Here, we have investigated the effect of temperature and time during the doping process on optical reflectance and sheet resistance of black silicon. Doping temperatures of 875 °C and lower result in negligible increase of reflectance as compared to pristine black silicon. In addition, the sheet resistance of black silicon emitters is confirmed to be lower than that of planar Si under identical annealing conditions.

AB - Black silicon is a promising texturing method for solar cells since it suppresses optical reflection in a broad spectral range. This relaxes the usual antireflection requirements on the coatings used for surface passivation of silicon. Fabrication of n-type emitters requires diffusion of phosphorous through the nanostructures of black silicon, which may need different optimal conditions as compared to diffusion through e.g. pyramidal wet-etched structures due to the different characteristic dimensions. In addition, the diffusion process should ideally not deteriorate the antireflective properties of black silicon. Here, we have investigated the effect of temperature and time during the doping process on optical reflectance and sheet resistance of black silicon. Doping temperatures of 875 °C and lower result in negligible increase of reflectance as compared to pristine black silicon. In addition, the sheet resistance of black silicon emitters is confirmed to be lower than that of planar Si under identical annealing conditions.

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T2 - 7th World Conference on Photovoltaic Energy Conversion

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ER -

Diffusion of phosphorous in black silicon

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