Diffusion of phosphorous in black silicon

Andreas R. Stilling-Andersen, Olga Solodovnikova, Rasmus S. Davidsen, Ole Hansen, Beniamino Iandolo

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

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    Abstract

    Black silicon is a promising texturing method for solar cells since it suppresses optical reflection in a broad spectral range. This relaxes the usual antireflection requirements on the coatings used for surface passivation of silicon. Fabrication of n-type emitters requires diffusion of phosphorous through the nanostructures of black silicon, which may need different optimal conditions as compared to diffusion through e.g. pyramidal wet-etched
    structures due to the different characteristic dimensions. In addition, the diffusion process should ideally not deteriorate the antireflective properties of black silicon. Here, we have investigated the effect of temperature and time during the doping process on optical reflectance and sheet resistance of black silicon. Doping temperatures of 875 °C and lower result in negligible increase of reflectance as compared to pristine black silicon. In addition, the sheet resistance of black silicon emitters is confirmed to be lower than that of planar Si under identical annealing conditions.
    Original languageEnglish
    Title of host publication 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
    Number of pages4
    PublisherIEEE
    Publication date2018
    ISBN (Electronic)978-1-5386-8529-7
    DOIs
    Publication statusPublished - 2018
    Event7th World Conference on Photovoltaic Energy Conversion - Hilton Waikoloa Village Resort, Waikoloa, United States
    Duration: 10 Jun 201815 Jun 2018
    Conference number: WCPEC-7

    Conference

    Conference7th World Conference on Photovoltaic Energy Conversion
    NumberWCPEC-7
    LocationHilton Waikoloa Village Resort
    CountryUnited States
    CityWaikoloa
    Period10/06/201815/06/2018

    Keywords

    • black silicon
    • Phosphorous emitter
    • Diffusion

    Cite this

    Stilling-Andersen, A. R., Solodovnikova, O., Davidsen, R. S., Hansen, O., & Iandolo, B. (2018). Diffusion of phosphorous in black silicon. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) IEEE. https://doi.org/10.1109/PVSC.2018.8548096
    Stilling-Andersen, Andreas R. ; Solodovnikova, Olga ; Davidsen, Rasmus S. ; Hansen, Ole ; Iandolo, Beniamino. / Diffusion of phosphorous in black silicon. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018.
    @inproceedings{6b8cf94b90e241e9847496d5a352ec94,
    title = "Diffusion of phosphorous in black silicon",
    abstract = "Black silicon is a promising texturing method for solar cells since it suppresses optical reflection in a broad spectral range. This relaxes the usual antireflection requirements on the coatings used for surface passivation of silicon. Fabrication of n-type emitters requires diffusion of phosphorous through the nanostructures of black silicon, which may need different optimal conditions as compared to diffusion through e.g. pyramidal wet-etched structures due to the different characteristic dimensions. In addition, the diffusion process should ideally not deteriorate the antireflective properties of black silicon. Here, we have investigated the effect of temperature and time during the doping process on optical reflectance and sheet resistance of black silicon. Doping temperatures of 875 °C and lower result in negligible increase of reflectance as compared to pristine black silicon. In addition, the sheet resistance of black silicon emitters is confirmed to be lower than that of planar Si under identical annealing conditions.",
    keywords = "black silicon, Phosphorous emitter, Diffusion",
    author = "Stilling-Andersen, {Andreas R.} and Olga Solodovnikova and Davidsen, {Rasmus S.} and Ole Hansen and Beniamino Iandolo",
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    Stilling-Andersen, AR, Solodovnikova, O, Davidsen, RS, Hansen, O & Iandolo, B 2018, Diffusion of phosphorous in black silicon. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 7th World Conference on Photovoltaic Energy Conversion , Waikoloa, United States, 10/06/2018. https://doi.org/10.1109/PVSC.2018.8548096

    Diffusion of phosphorous in black silicon. / Stilling-Andersen, Andreas R.; Solodovnikova, Olga ; Davidsen, Rasmus S.; Hansen, Ole; Iandolo, Beniamino.

    2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018.

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

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    AU - Solodovnikova, Olga

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    AU - Iandolo, Beniamino

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    AB - Black silicon is a promising texturing method for solar cells since it suppresses optical reflection in a broad spectral range. This relaxes the usual antireflection requirements on the coatings used for surface passivation of silicon. Fabrication of n-type emitters requires diffusion of phosphorous through the nanostructures of black silicon, which may need different optimal conditions as compared to diffusion through e.g. pyramidal wet-etched structures due to the different characteristic dimensions. In addition, the diffusion process should ideally not deteriorate the antireflective properties of black silicon. Here, we have investigated the effect of temperature and time during the doping process on optical reflectance and sheet resistance of black silicon. Doping temperatures of 875 °C and lower result in negligible increase of reflectance as compared to pristine black silicon. In addition, the sheet resistance of black silicon emitters is confirmed to be lower than that of planar Si under identical annealing conditions.

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    KW - Phosphorous emitter

    KW - Diffusion

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    Stilling-Andersen AR, Solodovnikova O, Davidsen RS, Hansen O, Iandolo B. Diffusion of phosphorous in black silicon. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE. 2018 https://doi.org/10.1109/PVSC.2018.8548096