Different index contrast silica-on-silicon waveguides by PECVD

Research output: Contribution to journalJournal articlepeer-review


Ge-doped silica-on-silicon waveguides with index steps of 0.01 and 0.02 were fabricated by a combination of plasma enhanced chemical vapour deposition (PECVD) and reactive ion etching (RIE) techniques, and their characteristics, including propagation loss, coupling loss with standard singlemode fibres, minimal bend radius, and birefringence, were investigated. The waveguides have good propagation properties and small birefringence, compared to using flame hydrolysis deposition (FHD).
Original languageEnglish
JournalElectronics Letters
Issue number2
Pages (from-to)212-213
Publication statusPublished - 23 Jan 2003


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