Different index contrast silica-on-silicon waveguides by PECVD

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    Ge-doped silica-on-silicon waveguides with index steps of 0.01 and 0.02 were fabricated by a combination of plasma enhanced chemical vapour deposition (PECVD) and reactive ion etching (RIE) techniques, and their characteristics, including propagation loss, coupling loss with standard singlemode fibres, minimal bend radius, and birefringence, were investigated. The waveguides have good propagation properties and small birefringence, compared to using flame hydrolysis deposition (FHD).
    Original languageEnglish
    JournalElectronics Letters
    Issue number2
    Pages (from-to)212-213
    Publication statusPublished - 23 Jan 2003


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