Development and Characterisation of KOH Resistant PECVD Silicon Nitride for Microsystems Applications

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Original language	English
Title of host publication	Proceedings of the International Symposium on Dielectrics in Emerging Technologies
Publication date	2003
Pages	218-229
Publication status	Published - 2003

OpenUrl availability

@inproceedings{4004bc1a68904c41818d7d46e7c9bc52,

title = "Development and Characterisation of KOH Resistant PECVD Silicon Nitride for Microsystems Applications",

author = "Rasmussen, {Frank Engel} and Berit Geilman and M. Heschel and Ole Hansen and J{\o}rgensen, {Anders Michael}",

year = "2003",

language = "English",

pages = "218--229",

booktitle = "Proceedings of the International Symposium on Dielectrics in Emerging Technologies",

}

Development and Characterisation of KOH Resistant PECVD Silicon Nitride for Microsystems Applications. / Rasmussen, Frank Engel; Geilman, Berit; Heschel, M. et al.
Proceedings of the International Symposium on Dielectrics in Emerging Technologies. 2003. p. 218-229.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Development and Characterisation of KOH Resistant PECVD Silicon Nitride for Microsystems Applications

AU - Rasmussen, Frank Engel

AU - Geilman, Berit

AU - Heschel, M.

AU - Hansen, Ole

AU - Jørgensen, Anders Michael

PY - 2003

Y1 - 2003

M3 - Article in proceedings

SP - 218

EP - 229

BT - Proceedings of the International Symposium on Dielectrics in Emerging Technologies

ER -