Abstract
This work, for the first time, investigates an Impedance Spectroscopy (IS) based method for detecting potential-induced degradation (PID) in crystalline silicon photovoltaic (c-Si PV) panels. The method has been experimentally tested on a set of panels that were confirmed to be affected by PID by using traditional current-voltage (I-V) characterization methods, as well as electroluminescence (EL) imaging. The results confirm the effectiveness of the new approach to detect PID in PV panels.
| Original language | English |
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| Publication date | 2016 |
| Number of pages | 1 |
| Publication status | Published - 2016 |
| Event | 42nd IEEE Photovoltaic Specialists Conference - Hyatt Regency, New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015 Conference number: 42 http://www.ieee-pvsc.org/PVSC42/ |
Conference
| Conference | 42nd IEEE Photovoltaic Specialists Conference |
|---|---|
| Number | 42 |
| Location | Hyatt Regency |
| Country/Territory | United States |
| City | New Orleans |
| Period | 14/06/2015 → 19/06/2015 |
| Internet address |