This work, for the first time, investigates an Impedance Spectroscopy (IS) based method for detecting potential-induced degradation (PID) in crystalline silicon photovoltaic (c-Si PV) panels. The method has been experimentally tested on a set of panels that were confirmed to be affected by PID by using traditional current-voltage (I-V) characterization methods, as well as electroluminescence (EL) imaging. The results confirm the effectiveness of the new approach to detect PID in PV panels.
|Number of pages||1|
|Publication status||Published - 2016|
|Event||42nd IEEE Photovoltaic Specialists Conference - Hyatt Regency, New Orleans, United States|
Duration: 14 Jun 2015 → 19 Jun 2015
Conference number: 42
|Conference||42nd IEEE Photovoltaic Specialists Conference|
|Period||14/06/2015 → 19/06/2015|