Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence

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Two n-type 6H fluorescent SiC (f-SiC) samples have been characterized using thermally stimulated luminescence (TSL) spectroscopy, where the dominant carriers recombination regime has been found via the numerical simulations.
Original languageEnglish
Publication date2017
Number of pages1
Publication statusPublished - 2017
Event5th international workshop on LED and Solar Applications - DTU, Building 101, Kgs. Lyngby, Denmark
Duration: 13 Sep 201714 Sep 2017

Conference

Conference5th international workshop on LED and Solar Applications
LocationDTU, Building 101
CountryDenmark
CityKgs. Lyngby
Period13/09/201714/09/2017

    Research areas

  • 6H SiC, TSL, re-trapping

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