Two n-type 6H fluorescent SiC (f-SiC) samples have been characterized using thermally stimulated luminescence (TSL) spectroscopy, where the dominant carriers recombination regime has been found via the numerical simulations.
|Number of pages||1|
|Publication status||Published - 2017|
|Event||5th international workshop on LED and Solar Applications - DTU, Building 101, Kgs. Lyngby, Denmark|
Duration: 13 Sep 2017 → 14 Sep 2017
|Conference||5th international workshop on LED and Solar Applications|
|Location||DTU, Building 101|
|Period||13/09/2017 → 14/09/2017|
- 6H SiC
Wei, Y., Künecke, U., Wellmann, P., & Ou, H. (2017). Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence. Abstract from 5th international workshop on LED and Solar Applications, Kgs. Lyngby, Denmark.