Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence

Yi Wei, Ulrike Künecke, Peter Wellmann, Haiyan Ou

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    Abstract

    Two n-type 6H fluorescent SiC (f-SiC) samples have been characterized using thermally stimulated luminescence (TSL) spectroscopy, where the dominant carriers recombination regime has been found via the numerical simulations.
    Original languageEnglish
    Publication date2017
    Number of pages1
    Publication statusPublished - 2017
    Event5th international workshop on LED and Solar Applications - DTU, Building 101, Kgs. Lyngby, Denmark
    Duration: 13 Sep 201714 Sep 2017

    Conference

    Conference5th international workshop on LED and Solar Applications
    LocationDTU, Building 101
    Country/TerritoryDenmark
    CityKgs. Lyngby
    Period13/09/201714/09/2017

    Keywords

    • 6H SiC
    • TSL
    • re-trapping

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