Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence

Yi Wei; Ulrike Künecke; Peter Wellmann; Haiyan Ou

Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence

Yi Wei, Ulrike Künecke, Peter Wellmann, Haiyan Ou

Friedrich-Alexander University Erlangen-Nürnberg

Research output: Contribution to conference › Conference abstract for conference › Research › peer-review

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Abstract

Two n-type 6H fluorescent SiC (f-SiC) samples have been characterized using thermally stimulated luminescence (TSL) spectroscopy, where the dominant carriers recombination regime has been found via the numerical simulations.

Original language	English
Publication date	2017
Number of pages	1
Publication status	Published - 2017
Event	5th international workshop on LED and Solar Applications - DTU, Building 101, Kgs. Lyngby, Denmark Duration: 13 Sept 2017 → 14 Sept 2017

Conference

Conference	5th international workshop on LED and Solar Applications
Location	DTU, Building 101
Country/Territory	Denmark
City	Kgs. Lyngby
Period	13/09/2017 → 14/09/2017

Keywords

6H SiC
TSL
re-trapping

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@conference{708398ea897e4f4daac1ac40d3968428,

title = "Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence",

abstract = "Two n-type 6H fluorescent SiC (f-SiC) samples have been characterized using thermally stimulated luminescence (TSL) spectroscopy, where the dominant carriers recombination regime has been found via the numerical simulations.",

keywords = "6H SiC, TSL, re-trapping",

author = "Yi Wei and Ulrike K{\"u}necke and Peter Wellmann and Haiyan Ou",

year = "2017",

language = "English",

note = "5th international workshop on LED and Solar Applications ; Conference date: 13-09-2017 Through 14-09-2017",

}

TY - ABST

T1 - Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence

AU - Wei, Yi

AU - Künecke, Ulrike

AU - Wellmann, Peter

AU - Ou, Haiyan

PY - 2017

Y1 - 2017

N2 - Two n-type 6H fluorescent SiC (f-SiC) samples have been characterized using thermally stimulated luminescence (TSL) spectroscopy, where the dominant carriers recombination regime has been found via the numerical simulations.

AB - Two n-type 6H fluorescent SiC (f-SiC) samples have been characterized using thermally stimulated luminescence (TSL) spectroscopy, where the dominant carriers recombination regime has been found via the numerical simulations.

KW - 6H SiC

KW - TSL

KW - re-trapping

M3 - Conference abstract for conference

T2 - 5th international workshop on LED and Solar Applications

Y2 - 13 September 2017 through 14 September 2017

ER -

Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence

Abstract

Conference

Keywords

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