TY - JOUR
T1 - Detailed theoretical and experimental investigation of high-gain erbium-doped fiber amplifier
AU - Pedersen, Bo
AU - Dybdal, Kristen
AU - Dam-Hansen, Carsten
AU - Bjarklev, Anders Overgaard
AU - Povlsen, Jørn Hedegaard
AU - Vendeltorp-Pommer, Helle
AU - Larsen, Carl Christian
N1 - Copyright: 1990 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE
PY - 1990
Y1 - 1990
N2 - A full-scale numerical model for the erbium-doped fiber amplifier has been developed that incorporates realistic index and erbium-concentration profiles as well as the spectral distribution of amplified spontaneous emission (ASE). The high accuracy of the model is demonstrated by comparison with a comprehensive set of data, including gain, ASE, and pump power, obtained for a well-characterized Er-Al-doped fiber. An absorption-to-emission cross-section ratio of 1.0 was measured at the gain peak. Pumping at 654 nm, the excited state absorption was observed to be insignificant. A high gain of 39.6 dB was achieved in the experiment
AB - A full-scale numerical model for the erbium-doped fiber amplifier has been developed that incorporates realistic index and erbium-concentration profiles as well as the spectral distribution of amplified spontaneous emission (ASE). The high accuracy of the model is demonstrated by comparison with a comprehensive set of data, including gain, ASE, and pump power, obtained for a well-characterized Er-Al-doped fiber. An absorption-to-emission cross-section ratio of 1.0 was measured at the gain peak. Pumping at 654 nm, the excited state absorption was observed to be insignificant. A high gain of 39.6 dB was achieved in the experiment
U2 - 10.1109/68.62011
DO - 10.1109/68.62011
M3 - Journal article
VL - 2
SP - 863
EP - 865
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 12
ER -