Designing photonic topological insulators with quantum-spin-Hall edge states using topology optimization

Rasmus E. Christiansen*, Fengwen Wang, Ole Sigmund, Søren Stobbe

*Corresponding author for this work

    Research output: Contribution to journalJournal articleResearchpeer-review

    275 Downloads (Pure)

    Abstract

    Designing photonic topological insulators (PTIs) is highly non-trivial because it requires inversion of band symmetries around the band gap, which was so far done using intuition combined with meticulous trial and error. Here we take a completely different approach: we consider the design of PTIs as an inverse design problem and use topology optimization to maximize the transmission through an edge mode past a sharp bend. Two design domains composed of two different but initially identical C-symmetric unit cells define the geometrical design problem. Remarkably, the optimization results in a PTI reminiscent of the shrink-and-grow approach to quantum-spin-Hall PTIs but with notable differences in the crystal structure as well as qualitatively different band structures and with significantly improved performance as gauged by the band-gap sizes, which are at least 50% larger than in previous designs. Furthermore, we find a directional β-factor exceeding 99% and very low losses for sharp bends. Our approach allows the introduction of fabrication limitations by design and opens an avenue towards designing PTIs with hitherto-unexplored symmetry constraints.

    Original languageEnglish
    JournalNanophotonics
    Volume8
    Issue number8
    Pages (from-to)1363-1369
    ISSN2192-8606
    DOIs
    Publication statusPublished - 2019

    Keywords

    • Photonic crystals
    • Photonic topological insulators
    • Top-down design
    • Topology optimization

    Fingerprint

    Dive into the research topics of 'Designing photonic topological insulators with quantum-spin-Hall edge states using topology optimization'. Together they form a unique fingerprint.

    Cite this