Design procedure for millimeter-wave InP DHBT stacked power amplifiers

Michele Squartecchia, Tom Keinicke Johansen, Virginio Midili

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review


The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors (DHBTs). In this paper we describe the design methodology adopted and the results obtained at 86 GHz and 140 GHz. In the former case, 14.5 dBm of output power at the compression point, 14.5 dB of gain and 19.6 % of PAE are obtained from a four-transistor power cell. At 140 GHz, the same architecture gives 13.1 dBm of output power, 10.1 dB of gain and 13 % of PAE. To the best of the authors' knowledge, this is the first investigation of multi-level stacked PAs based on InP HBT technology.
Original languageEnglish
Title of host publicationProceedings of 2015 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop
Publication date2015
ISBN (Print)9781467364966
Publication statusPublished - 2015
EventInternational Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits 2015 - Taormina, Italy
Duration: 1 Oct 20152 Oct 2015


ConferenceInternational Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits 2015
Internet address


  • Components, Circuits, Devices and Systems
  • Fields, Waves and Electromagnetics
  • General Topics for Engineers
  • Heterojunction bipolar transistor (HBT)
  • III-V semiconductor materials
  • Indium phosphide
  • Millimeter wave integrated circuits
  • Millimeter wave transistors
  • MMIC
  • power amplifier
  • Power amplifiers
  • Power generation
  • stacked transistors


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