Design procedure for millimeter-wave InP DHBT stacked power amplifiers

Michele Squartecchia; Tom Keinicke Johansen; Virginio Midili

doi:10.1109/INMMIC.2015.7330368

Design procedure for millimeter-wave InP DHBT stacked power amplifiers

Michele Squartecchia, Tom Keinicke Johansen, Virginio Midili

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors (DHBTs). In this paper we describe the design methodology adopted and the results obtained at 86 GHz and 140 GHz. In the former case, 14.5 dBm of output power at the compression point, 14.5 dB of gain and 19.6 % of PAE are obtained from a four-transistor power cell. At 140 GHz, the same architecture gives 13.1 dBm of output power, 10.1 dB of gain and 13 % of PAE. To the best of the authors' knowledge, this is the first investigation of multi-level stacked PAs based on InP HBT technology.

Original language	English
Title of host publication	Proceedings of 2015 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop
Publisher	IEEE
Publication date	2015
Pages	1-3
ISBN (Print)	9781467364966
DOIs	https://doi.org/10.1109/INMMIC.2015.7330368
Publication status	Published - 2015
Event	International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits 2015 - Taormina, Italy Duration: 1 Oct 2015 → 2 Oct 2015 http://www.inmmic.org

Conference

Conference	International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits 2015
Country/Territory	Italy
City	Taormina
Period	01/10/2015 → 02/10/2015
Internet address	http://www.inmmic.org

Keywords

Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
General Topics for Engineers
Heterojunction bipolar transistor (HBT)
III-V semiconductor materials
Indium phosphide
Millimeter wave integrated circuits
Millimeter wave transistors
MMIC
power amplifier
Power amplifiers
Power generation
stacked transistors

Access to Document

10.1109/INMMIC.2015.7330368

OpenUrl availability

Full text

Cite this

@inproceedings{7016feed60414ca883b933e1dca7addd,

title = "Design procedure for millimeter-wave InP DHBT stacked power amplifiers",

abstract = "The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors (DHBTs). In this paper we describe the design methodology adopted and the results obtained at 86 GHz and 140 GHz. In the former case, 14.5 dBm of output power at the compression point, 14.5 dB of gain and 19.6 % of PAE are obtained from a four-transistor power cell. At 140 GHz, the same architecture gives 13.1 dBm of output power, 10.1 dB of gain and 13 % of PAE. To the best of the authors' knowledge, this is the first investigation of multi-level stacked PAs based on InP HBT technology.",

keywords = "Components, Circuits, Devices and Systems, Fields, Waves and Electromagnetics, General Topics for Engineers, Heterojunction bipolar transistor (HBT), III-V semiconductor materials, Indium phosphide, Millimeter wave integrated circuits, Millimeter wave transistors, MMIC, power amplifier, Power amplifiers, Power generation, stacked transistors",

author = "Michele Squartecchia and Johansen, {Tom Keinicke} and Virginio Midili",

year = "2015",

doi = "10.1109/INMMIC.2015.7330368",

language = "English",

isbn = "9781467364966",

pages = "1--3",

booktitle = "Proceedings of 2015 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop",

publisher = "IEEE",

address = "United States",

note = "International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits 2015, INMMiC 2015 ; Conference date: 01-10-2015 Through 02-10-2015",

url = "http://www.inmmic.org",

}

Squartecchia, M, Johansen, TK & Midili, V 2015, Design procedure for millimeter-wave InP DHBT stacked power amplifiers. in Proceedings of 2015 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop. IEEE, pp. 1-3, International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits 2015, Taormina, Italy, 01/10/2015. https://doi.org/10.1109/INMMIC.2015.7330368

TY - GEN

T1 - Design procedure for millimeter-wave InP DHBT stacked power amplifiers

AU - Squartecchia, Michele

AU - Johansen, Tom Keinicke

AU - Midili, Virginio

PY - 2015

Y1 - 2015

N2 - The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors (DHBTs). In this paper we describe the design methodology adopted and the results obtained at 86 GHz and 140 GHz. In the former case, 14.5 dBm of output power at the compression point, 14.5 dB of gain and 19.6 % of PAE are obtained from a four-transistor power cell. At 140 GHz, the same architecture gives 13.1 dBm of output power, 10.1 dB of gain and 13 % of PAE. To the best of the authors' knowledge, this is the first investigation of multi-level stacked PAs based on InP HBT technology.

AB - The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors (DHBTs). In this paper we describe the design methodology adopted and the results obtained at 86 GHz and 140 GHz. In the former case, 14.5 dBm of output power at the compression point, 14.5 dB of gain and 19.6 % of PAE are obtained from a four-transistor power cell. At 140 GHz, the same architecture gives 13.1 dBm of output power, 10.1 dB of gain and 13 % of PAE. To the best of the authors' knowledge, this is the first investigation of multi-level stacked PAs based on InP HBT technology.

KW - Components, Circuits, Devices and Systems

KW - Fields, Waves and Electromagnetics

KW - General Topics for Engineers

KW - Heterojunction bipolar transistor (HBT)

KW - III-V semiconductor materials

KW - Indium phosphide

KW - Millimeter wave integrated circuits

KW - Millimeter wave transistors

KW - MMIC

KW - power amplifier

KW - Power amplifiers

KW - Power generation

KW - stacked transistors

U2 - 10.1109/INMMIC.2015.7330368

DO - 10.1109/INMMIC.2015.7330368

M3 - Article in proceedings

SN - 9781467364966

SP - 1

EP - 3

BT - Proceedings of 2015 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop

PB - IEEE

T2 - International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits 2015

Y2 - 1 October 2015 through 2 October 2015

ER -

Design procedure for millimeter-wave InP DHBT stacked power amplifiers

Abstract

Conference

Keywords

Access to Document

OpenUrl availability

Fingerprint

Cite this