Design of mm-wave InP DHBT power amplifiers

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Abstract

In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output power, gain, and efficiency. The design issues associated with cascode based power amplifiers at mm-wave frequencies is described. The experimental results on a two-way combined single-stage cascode based InP DHBT power amplifier demonstrate 13.4dB linear power gain and 12.5dBm saturated output power at 69.6GHz.
Original languageEnglish
Title of host publicationProceedings of 2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)
PublisherIEEE
Publication date2011
Pages357-360
ISBN (Print)978-1-4577-1662-1
DOIs
Publication statusPublished - 2011
Event2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC) - Natal, Brazil
Duration: 29 Oct 20111 Nov 2011

Conference

Conference2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)
CountryBrazil
CityNatal
Period29/10/201101/11/2011

Keywords

  • heterojunction bipolar transistors
  • indium compounds
  • microwave integrated circuits
  • millimetre wave power amplifiers

Cite this

Johansen, T. K., & Yan, L. (2011). Design of mm-wave InP DHBT power amplifiers. In Proceedings of 2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC) (pp. 357-360). IEEE. https://doi.org/10.1109/IMOC.2011.6169249