Design of mm-wave InP DHBT power amplifiers

Tom Keinicke Johansen; Lei Yan

doi:10.1109/IMOC.2011.6169249

Design of mm-wave InP DHBT power amplifiers

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output power, gain, and efficiency. The design issues associated with cascode based power amplifiers at mm-wave frequencies is described. The experimental results on a two-way combined single-stage cascode based InP DHBT power amplifier demonstrate 13.4dB linear power gain and 12.5dBm saturated output power at 69.6GHz.

Original language	English
Title of host publication	Proceedings of 2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)
Publisher	IEEE
Publication date	2011
Pages	357-360
ISBN (Print)	978-1-4577-1662-1
DOIs	https://doi.org/10.1109/IMOC.2011.6169249
Publication status	Published - 2011
Event	2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - Natal, Brazil Duration: 29 Oct 2011 → 1 Nov 2011 https://ieeexplore.ieee.org/xpl/conhome/6165551/proceeding

Conference

Conference	2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference
Country/Territory	Brazil
City	Natal
Period	29/10/2011 → 01/11/2011
Internet address	https://ieeexplore.ieee.org/xpl/conhome/6165551/proceeding

Keywords

heterojunction bipolar transistors
indium compounds
microwave integrated circuits
millimetre wave power amplifiers

Access to Document

10.1109/IMOC.2011.6169249

OpenUrl availability

Full text

Cite this

@inproceedings{a39a5ed579564979b4889d076b8bee0d,

title = "Design of mm-wave InP DHBT power amplifiers",

abstract = "In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output power, gain, and efficiency. The design issues associated with cascode based power amplifiers at mm-wave frequencies is described. The experimental results on a two-way combined single-stage cascode based InP DHBT power amplifier demonstrate 13.4dB linear power gain and 12.5dBm saturated output power at 69.6GHz.",

keywords = "heterojunction bipolar transistors, indium compounds, microwave integrated circuits, millimetre wave power amplifiers",

author = "Johansen, {Tom Keinicke} and Lei Yan",

year = "2011",

doi = "10.1109/IMOC.2011.6169249",

language = "English",

isbn = "978-1-4577-1662-1",

pages = "357--360",

booktitle = "Proceedings of 2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)",

publisher = "IEEE",

address = "United States",

note = "2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, IMOC 2011 ; Conference date: 29-10-2011 Through 01-11-2011",

url = "https://ieeexplore.ieee.org/xpl/conhome/6165551/proceeding",

}

TY - GEN

T1 - Design of mm-wave InP DHBT power amplifiers

AU - Johansen, Tom Keinicke

AU - Yan, Lei

PY - 2011

Y1 - 2011

N2 - In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output power, gain, and efficiency. The design issues associated with cascode based power amplifiers at mm-wave frequencies is described. The experimental results on a two-way combined single-stage cascode based InP DHBT power amplifier demonstrate 13.4dB linear power gain and 12.5dBm saturated output power at 69.6GHz.

AB - In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output power, gain, and efficiency. The design issues associated with cascode based power amplifiers at mm-wave frequencies is described. The experimental results on a two-way combined single-stage cascode based InP DHBT power amplifier demonstrate 13.4dB linear power gain and 12.5dBm saturated output power at 69.6GHz.

KW - heterojunction bipolar transistors

KW - indium compounds

KW - microwave integrated circuits

KW - millimetre wave power amplifiers

U2 - 10.1109/IMOC.2011.6169249

DO - 10.1109/IMOC.2011.6169249

M3 - Article in proceedings

SN - 978-1-4577-1662-1

SP - 357

EP - 360

BT - Proceedings of 2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)

PB - IEEE

T2 - 2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference

Y2 - 29 October 2011 through 1 November 2011

ER -

Design of mm-wave InP DHBT power amplifiers

Abstract

Conference

Keywords

Access to Document

OpenUrl availability

Fingerprint

Cite this