Design of a planar Schottky diode based 200 GHz frequency multiplier

Viktor Krozer

doi:10.1109/ICIMW.2006.368519

Design of a planar Schottky diode based 200 GHz frequency multiplier

Viktor Krozer

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

We present design of a 200 GHz frequency multiplier based on commercially available Schottky diodes. The device model has been extracted from millimeter-wave small-signal S-parameter measurements. The frequency multiplier is fully planar on alumina substrates. The resulting conversion efficiency is 18.9% at 96 GHz input frequency. The multiplier is contacted with the help of especially designed CPW to microstrip transitions.

Original language	English
Title of host publication	Proceedings of the Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics
Publisher	IEEE
Publication date	2006
ISBN (Print)	1-4244-0400-2
DOIs	https://doi.org/10.1109/ICIMW.2006.368519
Publication status	Published - 2006
Event	Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics - Shanghai, China Duration: 18 Sept 2006 → 22 Sept 2006

Conference

Conference	Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics
Country/Territory	China
City	Shanghai
Period	18/09/2006 → 22/09/2006

Bibliographical note

Copyright: 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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title = "Design of a planar Schottky diode based 200 GHz frequency multiplier",

abstract = "We present design of a 200 GHz frequency multiplier based on commercially available Schottky diodes. The device model has been extracted from millimeter-wave small-signal S-parameter measurements. The frequency multiplier is fully planar on alumina substrates. The resulting conversion efficiency is 18.9% at 96 GHz input frequency. The multiplier is contacted with the help of especially designed CPW to microstrip transitions.",

author = "Viktor Krozer",

note = "Copyright: 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz 2006 ; Conference date: 18-09-2006 Through 22-09-2006",

year = "2006",

doi = "10.1109/ICIMW.2006.368519",

language = "English",

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booktitle = "Proceedings of the Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics",

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address = "United States",

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Krozer, V 2006, Design of a planar Schottky diode based 200 GHz frequency multiplier. in Proceedings of the Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics. IEEE, Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, Shanghai, China, 18/09/2006. https://doi.org/10.1109/ICIMW.2006.368519

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AU - Krozer, Viktor

N1 - Copyright: 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 2006

Y1 - 2006

N2 - We present design of a 200 GHz frequency multiplier based on commercially available Schottky diodes. The device model has been extracted from millimeter-wave small-signal S-parameter measurements. The frequency multiplier is fully planar on alumina substrates. The resulting conversion efficiency is 18.9% at 96 GHz input frequency. The multiplier is contacted with the help of especially designed CPW to microstrip transitions.

AB - We present design of a 200 GHz frequency multiplier based on commercially available Schottky diodes. The device model has been extracted from millimeter-wave small-signal S-parameter measurements. The frequency multiplier is fully planar on alumina substrates. The resulting conversion efficiency is 18.9% at 96 GHz input frequency. The multiplier is contacted with the help of especially designed CPW to microstrip transitions.

U2 - 10.1109/ICIMW.2006.368519

DO - 10.1109/ICIMW.2006.368519

M3 - Article in proceedings

SN - 1-4244-0400-2

BT - Proceedings of the Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics

PB - IEEE

T2 - Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics

Y2 - 18 September 2006 through 22 September 2006

ER -

Design of a planar Schottky diode based 200 GHz frequency multiplier

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