Abstract
A cantilever beam based memory element is proposed which can trap static charge on a metal plate on the beam. The charge is transferred by tunneling to the metal plate from an electrode separated from it by a layer of insulation. The ON condition is represented by the deformed state of the beam when charge is placed on it and the OFF condition is represented by the relaxed state when charge is removed. Hence, the write and erase operation are performed using electrostatic actuation and the read operation is performed using piezoresistive sensing. In addition to the design and operation, the scaling aspect of the element is discussed to facilitate the fabrication of the device. Some of the advantages of this device include better speed as compared to conventional memory devices, better area density and lower power consumption.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of 2012 NSTI Nanotechnology Conference and Expo : Electronics, Devices, Fabrication, MEMS, Fluidics and Computational |
| Volume | 2 |
| Publisher | Nano Science and Technology Institute - NSTI |
| Publication date | 2012 |
| Pages | 192-195 |
| ISBN (Print) | 978-1-4665-6275-2 |
| Publication status | Published - 2012 |
| Externally published | Yes |
| Event | 2012 NSTI Nanotechnology Conference and Expo - Santa Clara, United States Duration: 18 Jun 2012 → 21 Jun 2012 |
Conference
| Conference | 2012 NSTI Nanotechnology Conference and Expo |
|---|---|
| Country/Territory | United States |
| City | Santa Clara |
| Period | 18/06/2012 → 21/06/2012 |
Keywords
- Data storage equipment
- Electrostatic actuators
- Exhibitions
- Fabrication
- Fluidics
- MEMS
- NEMS
- Plating
- Nanotechnology
- Area density
- Cantilever
- Conventional memories
- Deformed state
- Design and operations
- Electrostatic actuation
- Erase operation
- Lower-power consumption
- Memory element
- Metal plates
- Piezoresistive sensing
- Read operation
- Relaxed state
- Static charge
- Memory
- Mems
- Nems