Design, Modelling and Characterization of a 3-Vppd 90-GBaud Over-110-GHz-Bandwidth Linear Driver in 0.5-μm InP DHBTs for Optical Communications

R. Hersent; Tom K. Johansen; V. Nodjiadjim; F. Jorge; B. Duval; F. Blache; M. Riet; C. Mismer; A. Konczykowska

doi:10.1109/BCICTS50416.2021.9682463

Design, Modelling and Characterization of a 3-Vppd 90-GBaud Over-110-GHz-Bandwidth Linear Driver in 0.5-μm InP DHBTs for Optical Communications

R. Hersent
, Tom K. Johansen
, V. Nodjiadjim
, F. Jorge
, B. Duval
, F. Blache
, M. Riet
, C. Mismer
, A. Konczykowska

III-V Lab

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

In this article, we present the modelling, design and characterization of a 3-Vppd linear-output-swing 90-GBd PAM-4 modulator driver, realised in III-V Lab's in-house 0.5-μm InP DHBT technology (380/520-GHz ${f_{T}/f_{{\max}}}$, 4.2-V ${BV_{\text{CE0}}}$). The driver exhibits 13-dB equalisation capabilities at 95 GHz with a bandwidth well beyond 110 GHz. It features a 0.67-W power consumption, resulting in a 1.5-GBd FoM with good output signal quality. To the best of our knowledge this linear driver shows the highest >64 GBd PAM-4 performance in current state-of-the-art, without DSP nor pre-emphasis. We also report on a newly developed 0.5-μm InP DHBT technology and its modelling using small-value external parasitic EM-simulation extraction, showing improved high-frequency prediction accuracy at circuit level.

Original language	English
Title of host publication	Proceedings of 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium
Publisher	IEEE
Publication date	8 Dec 2021
Pages	1-4
Article number	9682463
ISBN (Print)	978-1-6654-3991-6
DOIs	https://doi.org/10.1109/BCICTS50416.2021.9682463
Publication status	Published - 8 Dec 2021
Event	2021 IEEE BiCMOS and Compound Semiconductor Integrated - Marriott Monterey, Monterey , United States Duration: 5 Dec 2021 → 8 Dec 2021

Conference

Conference	2021 IEEE BiCMOS and Compound Semiconductor Integrated
Location	Marriott Monterey
Country/Territory	United States
City	Monterey
Period	05/12/2021 → 08/12/2021

Keywords

Power demand
Optical design
DH-HEMTs
Predictive models
Optical fiber communication
Optical modulation
Integrated circuit modeling

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10.1109/BCICTS50416.2021.9682463

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Hersent, R., Johansen, T. K., Nodjiadjim, V., Jorge, F., Duval, B., Blache, F., Riet, M., Mismer, C., & Konczykowska, A. (2021). Design, Modelling and Characterization of a 3-Vppd 90-GBaud Over-110-GHz-Bandwidth Linear Driver in 0.5-μm InP DHBTs for Optical Communications. In Proceedings of 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (pp. 1-4). Article 9682463 IEEE. https://doi.org/10.1109/BCICTS50416.2021.9682463

@inproceedings{ee24d0e8c44246cab3655111acb9e99d,

title = "Design, Modelling and Characterization of a 3-Vppd 90-GBaud Over-110-GHz-Bandwidth Linear Driver in 0.5-μm InP DHBTs for Optical Communications",

abstract = "In this article, we present the modelling, design and characterization of a 3-Vppd linear-output-swing 90-GBd PAM-4 modulator driver, realised in III-V Lab's in-house 0.5-μm InP DHBT technology (380/520-GHz \$\{f\_\{T\}/f\_\{\{\textbackslash{}max\}\}\}\$, 4.2-V \$\{BV\_\{\textbackslash{}text\{CE0\}\}\}\$). The driver exhibits 13-dB equalisation capabilities at 95 GHz with a bandwidth well beyond 110 GHz. It features a 0.67-W power consumption, resulting in a 1.5-GBd FoM with good output signal quality. To the best of our knowledge this linear driver shows the highest >64 GBd PAM-4 performance in current state-of-the-art, without DSP nor pre-emphasis. We also report on a newly developed 0.5-μm InP DHBT technology and its modelling using small-value external parasitic EM-simulation extraction, showing improved high-frequency prediction accuracy at circuit level.",

keywords = "Power demand, Optical design, DH-HEMTs, Predictive models, Optical fiber communication, Optical modulation, Integrated circuit modeling",

author = "R. Hersent and Johansen, \{Tom K.\} and V. Nodjiadjim and F. Jorge and B. Duval and F. Blache and M. Riet and C. Mismer and A. Konczykowska",

year = "2021",

month = dec,

day = "8",

doi = "10.1109/BCICTS50416.2021.9682463",

language = "English",

isbn = "978-1-6654-3991-6",

pages = "1--4",

booktitle = "Proceedings of 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium",

publisher = "IEEE",

address = "United States",

note = "2021 IEEE BiCMOS and Compound Semiconductor Integrated, 2021 BCICTS ; Conference date: 05-12-2021 Through 08-12-2021",

}

Hersent, R, Johansen, TK, Nodjiadjim, V, Jorge, F, Duval, B, Blache, F, Riet, M, Mismer, C & Konczykowska, A 2021, Design, Modelling and Characterization of a 3-Vppd 90-GBaud Over-110-GHz-Bandwidth Linear Driver in 0.5-μm InP DHBTs for Optical Communications. in Proceedings of 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium., 9682463, IEEE, pp. 1-4, 2021 IEEE BiCMOS and Compound Semiconductor Integrated, Monterey , California, United States, 05/12/2021. https://doi.org/10.1109/BCICTS50416.2021.9682463

Design, Modelling and Characterization of a 3-Vppd 90-GBaud Over-110-GHz-Bandwidth Linear Driver in 0.5-μm InP DHBTs for Optical Communications. / Hersent, R.; Johansen, Tom K.; Nodjiadjim, V. et al.
Proceedings of 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium. IEEE, 2021. p. 1-4 9682463.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Design, Modelling and Characterization of a 3-Vppd 90-GBaud Over-110-GHz-Bandwidth Linear Driver in 0.5-μm InP DHBTs for Optical Communications

AU - Hersent, R.

AU - Johansen, Tom K.

AU - Nodjiadjim, V.

AU - Jorge, F.

AU - Duval, B.

AU - Blache, F.

AU - Riet, M.

AU - Mismer, C.

AU - Konczykowska, A.

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Y1 - 2021/12/8

N2 - In this article, we present the modelling, design and characterization of a 3-Vppd linear-output-swing 90-GBd PAM-4 modulator driver, realised in III-V Lab's in-house 0.5-μm InP DHBT technology (380/520-GHz ${f_{T}/f_{{\max}}}$, 4.2-V ${BV_{\text{CE0}}}$). The driver exhibits 13-dB equalisation capabilities at 95 GHz with a bandwidth well beyond 110 GHz. It features a 0.67-W power consumption, resulting in a 1.5-GBd FoM with good output signal quality. To the best of our knowledge this linear driver shows the highest >64 GBd PAM-4 performance in current state-of-the-art, without DSP nor pre-emphasis. We also report on a newly developed 0.5-μm InP DHBT technology and its modelling using small-value external parasitic EM-simulation extraction, showing improved high-frequency prediction accuracy at circuit level.

AB - In this article, we present the modelling, design and characterization of a 3-Vppd linear-output-swing 90-GBd PAM-4 modulator driver, realised in III-V Lab's in-house 0.5-μm InP DHBT technology (380/520-GHz ${f_{T}/f_{{\max}}}$, 4.2-V ${BV_{\text{CE0}}}$). The driver exhibits 13-dB equalisation capabilities at 95 GHz with a bandwidth well beyond 110 GHz. It features a 0.67-W power consumption, resulting in a 1.5-GBd FoM with good output signal quality. To the best of our knowledge this linear driver shows the highest >64 GBd PAM-4 performance in current state-of-the-art, without DSP nor pre-emphasis. We also report on a newly developed 0.5-μm InP DHBT technology and its modelling using small-value external parasitic EM-simulation extraction, showing improved high-frequency prediction accuracy at circuit level.

KW - Power demand

KW - Optical design

KW - DH-HEMTs

KW - Predictive models

KW - Optical fiber communication

KW - Optical modulation

KW - Integrated circuit modeling

U2 - 10.1109/BCICTS50416.2021.9682463

DO - 10.1109/BCICTS50416.2021.9682463

M3 - Article in proceedings

SN - 978-1-6654-3991-6

SP - 1

EP - 4

BT - Proceedings of 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium

PB - IEEE

T2 - 2021 IEEE BiCMOS and Compound Semiconductor Integrated

Y2 - 5 December 2021 through 8 December 2021

ER -

Hersent R, Johansen TK, Nodjiadjim V, Jorge F, Duval B, Blache F et al. Design, Modelling and Characterization of a 3-Vppd 90-GBaud Over-110-GHz-Bandwidth Linear Driver in 0.5-μm InP DHBTs for Optical Communications. In Proceedings of 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium. IEEE. 2021. p. 1-4. 9682463 doi: 10.1109/BCICTS50416.2021.9682463

Design, Modelling and Characterization of a 3-Vppd 90-GBaud Over-110-GHz-Bandwidth Linear Driver in 0.5-μm InP DHBTs for Optical Communications

Abstract

Conference

Keywords

Access to Document

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