Design and Simulation of a Quaternary Memory Cell based on a Physical Memristor

Alberto Nannarelli, Jonathan Taylor

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Abstract

Memristors were theorized more than fifty years ago, but only recently physical devices with memristor’s behavior have been fabricated and shipped. In this work, we experiment on one of these physical memristors by designing a memristorbased memory cell, implementing the cell, and testing it. Our experiments demonstrate that the memristor technology is not yet mature for practical applications, but, nevertheless, when production will provide reliable and dependable devices, memristorbased memory systems may replace CMOS memories with some advantages.
Original languageEnglish
Title of host publicationProceedings of the 2016 IEEE Nordic Circuits and Systems Conference (NorCAS)
Number of pages6
PublisherIEEE
Publication date2016
DOIs
Publication statusPublished - 2016
Event2016 IEEE Nordic Circuits and Systems Conference - Copenhagen, Denmark
Duration: 1 Nov 20162 Nov 2016
Conference number: 2
https://ieeexplore.ieee.org/xpl/conhome/7784514/proceeding

Conference

Conference2016 IEEE Nordic Circuits and Systems Conference
Number2
Country/TerritoryDenmark
CityCopenhagen
Period01/11/201602/11/2016
Internet address

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